“Ga-free” strain-balanced InAsP/InAsSb superlattices grown on InAs substrate by Metal Organic Chemical Vapor Deposition(MOCVD)was proposed and implemented to explore its feasibility as an infrared absorption material. First, the band gaps of InAsP/InAsSb superlattices were calculated by k·p method, and it was found that their cut-off wavelength cover mid-wavelength infrared to long wave infrared region. Then, InAs_0.8P_0.2/InAs_0.7Sb_0.3 superlattices were chosen and grown on InAs substrate by MOCVD. XRD measurement shows that the lattice mismatches between the InAs substrate peak and 0^th order satellite peak of superlattices is only 61", indicating strain balance condition is achieved. AFM test for surface morphology shows its root mean square roughness is only 0.4 nm for 5×5 μm² regions. The low-temperature PL spectra shows strong superlattice emission with peak located around 3.3 μm, which is closed to the design value. All the results indicate the feasibility and practicality of strain balanced InAsP/InAsSb superlattices grown by MOCVD for infrared detection.