Fig. 1. Structure of diffused junction GM-APD

Fig. 2. Relationship between gate amplitudes, temperatures, and normalized DCR, afterpulse probablity and PDE. (a) SPAD #1; (b) SPAD #2 ^[8]

Fig. 3. Relationship between excess noise and device gain

Fig. 4. Measurement curves under 2 μm illumination at room temperature. (a) Device A; (b) device B^[17]

Fig. 5. MAGIC detector. (a) MAGIC detector equivalent circuit; (b) an exemplary design of the MAGIC detector with InGaAs/InP material^[19]

Fig. 6. Results of Monte Carlo simulation. (a) Distribution of single-photon current response from Monte Carlo simulations; (b) dependence of current output on the number of photons in the input signal^[19]

Fig. 7. Structure and working principle of self-quenching and self-recovery detector. (a) Structure; (b) working principle^[22]

Fig. 8. NFAD top integrated resistance^[26]

Fig. 9. Relationship between afterpulse probability and PDE of the self quenching SPADs with monolithic integrated passive quenching resistor^[27]

Fig. 10. 1024 pixel performance maps of InGaAs/InP (1.55 μm) SPADs 32 × 32 focal plane arrays. (a) DCR of all pixels is kHz, less than 50 kHz; (b) average pixel PDE is 22%, taking into account all optical losses related to microlens array and other insertion^[27]

Fig. 11. Relevant parameters and cross section diagram of GM-APD. (a) Relationship between PDE,crosstalk and over bias of GM-APD; (b) cross section of InP GM-APD array combined with MLA^[31]

Fig. 12. 1×16 InGaAs/InP SPAD line array^[34]

Fig. 13. Schematic of optical path between two pixels. (a) Without metal trenches; (b) with metal trenches^[34]

Fig. 14. Schematic cross section and electric field profile of Al_x In_1-x As_y Sb_1-y SAGCM APD^[41]

Fig. 15. External quantum efficiency versus wavelength of a 150-μm-diameter Al_xIn_1-xAs_ySb_1-y SAGCM APD at 300 K^[41]

Fig. 16. EQE as a function of wavelength at 27 V and 23 V reverse bias for devices A and B, respectively^[17]

Fig. 17. Current-voltage and gain. (a) Devices A; (b) devices B^[17]

Fig. 18. Device structure diagram and energy band arrangement of Ga_0.47In_0.53As/GaAs_0.51Sb0.49[43]

Fig. 19. Relationship between dark current and reverse bias voltage of 200 μm devices^[43]

Fig. 20. Image of InGaAs / InP GM-APD 32 × 32 array. (a) 800 m target and imaging; (b) 6800 m target and imaging^[47]