Fig. 1. Schematic of device for nanosecond laser processing of CVD diamonds

Fig. 2. Simulation temperature cloud after single pulse. (a) Horizontal direction; (b) vertical direction

Fig. 3. Effect of laser power on etching surface pit morphology. (a) 3W; (b) 4W; (c) 5W; (d) 7W

Fig. 4. Raman spectra

Fig. 5. Morphology of etching pit. (a) Optical morphology; (b) Gaussian fitting of profile

Fig. 6. Effect of scanning speed on pulse spot overlapping during laser line etching. (a) Relatively small scanning speed; (b) relatively large scanning speed

Fig. 7. Laser line etching energy density model

Fig. 8. Line etching widths and side etching depths under different laser scanning speeds. (a) 50mm·s^-1; (b) 20mm·s^-1; (c) 0.2mm·s^-1

Fig. 9. Effect of laser power on line etching width. (a) 3W; (b) 7W; (c) 15W

Fig. 10. Effect of laser power on side surface line etching depth. (a) 3W; (b) 7W; (c) 15W

Fig. 11. SEM image of laser etched CVD diamond surface. (a) Surface; (b) side surface