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Laser & Optoelectronics Progress, Volume. 55, Issue 5, 050006(2018)

Characteristics and Progress of Vertical-Cavity Surface-Emitting Semiconductor Lasers

Yujiao Li1,2、1; 2; , Nan Zong、1*; *; , and Qinjun Peng1、1;
Author Affiliations
  • 1 Key Laboratory of Solid State Laser, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
  • 2 University of Chinese Academy of Sciences, Beijing 100049, China
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    Schematic of VCSEL. (a) Top-emitting; (b) bottom-emitting

    Fig. 1. Schematic of VCSEL. (a) Top-emitting; (b) bottom-emitting

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    Device structure chart of EP-VECSEL

    Fig. 2. Device structure chart of EP-VECSEL

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    Edge-pumped setup of OP-VECSEL

    Fig. 3. Edge-pumped setup of OP-VECSEL

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    End-pumped setup of OP-VECSEL

    Fig. 4. End-pumped setup of OP-VECSEL

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    Schematic of the passively mode-locked OP-VECSEL. (a) V-shaped cavity; (b) Z-shaped cavity

    Fig. 5. Schematic of the passively mode-locked OP-VECSEL. (a) V-shaped cavity; (b) Z-shaped cavity

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    Yujiao Li, Nan Zong, Qinjun Peng. Characteristics and Progress of Vertical-Cavity Surface-Emitting Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2018, 55(5): 050006

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    Paper Information

    Category: General

    Received: Nov. 6, 2017

    Accepted: --

    Published Online: Sep. 11, 2018

    The Author Email: Nan Zong ( zongnan@mail.ipc.ac.cn)

    DOI:10.3788/LOP55.050006

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology