Laser & Optoelectronics Progress, Volume. 56, Issue 8, 080002(2019)

Research Progress of Photoelectric Mixing Technology in Laser Three-Dimensional Imaging

Yuming Bu, Zhaoyang Zeng, Xiaoping Du*, and Yishuo Song
Author Affiliations
  • Space Engineering University, Beijing 101416, China
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    Figures & Tables(10)
    Basic model of photoelectric mixing technology[4]
    Classification of photoelectric mixing technology
    Schematic of HgCdTe LM-APDs produced by DRS company in USA[11]. (a) Cross-section; (b) top view
    Structural diagram of InGaAs-based LM-APD[14]
    Structural diagram of 32×32 InGaAs GM-APD produced by Princeton Lightwave company in USA[27]
    Structural diagram of ICCD
    EBAPS detector chip produced by Intevac company in USA[32]
    Structural diagram of novel microwave photoelectric mixer[35-36]
    Large diameter crystals produced by Fast Pulse Technology company in USA
    • Table 1. Performance parameters of EBAPS

      View table

      Table 1. Performance parameters of EBAPS

      ParameterNight VistaISIE6ISIE10
      NameVGA640×480SXGA1280×1024SXGA1280×1024
      Maximumgain300
      Workingvoltage500-2000 V
      Pixel size12.0 μm×12.0 μm6.7 μm×6.7 μm10.8 μm×10.8 μm
      Frame rate30 frame·s-127.5 frame·s-137 frame·s-1
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    Yuming Bu, Zhaoyang Zeng, Xiaoping Du, Yishuo Song. Research Progress of Photoelectric Mixing Technology in Laser Three-Dimensional Imaging[J]. Laser & Optoelectronics Progress, 2019, 56(8): 080002

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    Paper Information

    Category: Reviews

    Received: Sep. 12, 2018

    Accepted: Nov. 13, 2018

    Published Online: Jul. 26, 2019

    The Author Email: Xiaoping Du (htgcdxdxp401@163.com)

    DOI:10.3788/LOP56.080002

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