Microelectronics, Volume. 51, Issue 5, 627(2021)

An All MOS High Precision Voltage Reference Source Circuit

XU Quankun1,2, LI Ruzhang2,3, WANG Zhongyan3, YANG Xiaoyu1,2, and XIAO Yu1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(3)

    [1] [1] AKSHAYA R, SIVA S Y. Design of an improved bandgap reference in 180 nm CMOS process technology [C]//2nd IEEE Int Conf RTEICT. Bangalore, India. 2017: 521-524.

    [3] [3] KOUDOUNAS S, ANDREOU C M, GEORGIOU J. A novel CMOS bandgap reference circuit with improved high-order temperature compensation [C]//Proceed IEEE ISCS. Paris, France. 2010: 4073-4076.

    [9] [9] HAMOUDA A, ARNOLD R, MANCK O, et al. 7.72 ppm/℃, ultralow power, high PSRR CMOS bandgap reference voltage [C]//IFIP/IEEE 21st Int Conf VLSI-SoC. Istanbul, Turkey. 2013: 364-367.

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    XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627

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    Paper Information

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    Received: Feb. 4, 2021

    Accepted: --

    Published Online: Feb. 18, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210054

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