Microelectronics, Volume. 51, Issue 5, 627(2021)
An All MOS High Precision Voltage Reference Source Circuit
A high precision reference circuit was designed in a 0.35 μm CMOS process. All MOSFETs were adopted to avoid resistors, leading to smaller chip area. A new variable resistance method was adopted to realize accurate compensation. A two-stage voltage reference source was adopted to improve the power suppression ratio. The voltage reference source was simulated using Cadence Virtuoso. The results showed that when the temperature ranged from -40 ℃ to 125 ℃, the reference voltage was 1.146 V and the temperature coefficient was 1.025×10-5℃-1. At 27 ℃, the static current was 6.57 μA, and the PSRR was -96.64 dB @100 Hz and -93.94 dB @10 kHz. The linear adjustment degree of the voltage reference was 0.047% at 2.9 to 5 V power supply voltage. This circuit was suitable for analog integrated circuits with low power consumption and high precision.
Get Citation
Copy Citation Text
XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627
Category:
Received: Feb. 4, 2021
Accepted: --
Published Online: Feb. 18, 2022
The Author Email: