Photonics Research, Volume. 10, Issue 3, A35(2022)
High-speed silicon microring modulator at the 2 µm waveband with analysis and observation of optical bistability
Fig. 1. Simulation results of the 2 µm MRR under bistability. (a) The calculated output power spectra at different input powers, (b) the hysteresis loop presenting the relationships between output power and input power at a fixed wavelength detuning, (c) power threshold of bistability in a 2 µm ring.
Fig. 2. (a) Microring modulator structure with the N & P implantation regions highlighted. (b) Cross-sectional schematic of the phase shifter in the MRM. (c) Micrograph of the fabricated 2 µm MRM.
Fig. 3. Simulated carrier concentration of the L-shape phase shifter under reverse biases of (a) 0 V and (b) 2 V.
Fig. 5. (a) and (b) The resonant spectrum of the 2 µm MRM, (c) the shifted spectra under different heating powers, (d) the resonance shift as a function of heating power.
Fig. 6. (a) Shifted spectra under different reverse bias voltages measured by thermal sweeping method, (b) the measured S21 frequency responses.
Fig. 7. Resonant spectra under different launching powers, measured by the thermal sweeping method.
Fig. 8. Time-domain observation of square waves with 1 MHz and 5 MHz repetition rates under different optical launching power.
Fig. 9. Evolutions of ER and SNR of 10 Gbps OOK signal under different launching powers.
Fig. 10. (a)–(d) Eye diagrams of 20–35 Gbps OOK signals directly captured on sampling oscilloscope, (e) BER curves of 40 Gbps and 50 Gbps signals with post-FFE eye diagrams.
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Weihong Shen, Gangqiang Zhou, Jiangbing Du, Linjie Zhou, Ke Xu, Zuyuan He, "High-speed silicon microring modulator at the 2 µm waveband with analysis and observation of optical bistability," Photonics Res. 10, A35 (2022)
Special Issue: NEXT-GENERATION SILICON PHOTONICS
Received: Aug. 5, 2021
Accepted: Jan. 10, 2022
Published Online: Feb. 9, 2022
The Author Email: Jiangbing Du (dujiangbing@sjtu.edu.cn)