Advanced Photonics Nexus, Volume. 3, Issue 4, 044001(2024)

Silicon thermo-optic phase shifters: a review of configurations and optimization strategies

Jorge Parra1, Juan Navarro-Arenas1,2, and Pablo Sanchis1、*
Author Affiliations
  • 1Universitat Politècnica de València, Nanophotonics Technology Center, Valencia, Spain
  • 2Universidad de Valencia, Instituto de Ciencia de Materiales (ICMUV), Paterna, Spain
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    Figures & Tables(11)
    (a) Illustration of a TOPS using a metallic heater on top of the waveguide. (b) Cross section of the TOPS. (c) Simulated temperature distribution of the TOPS. (d) Temporal response of the TOPS upon a square electrical signal applied to the heater with (solid blue line) and without (dotted red line) employing pulse pre-emphasis. The considered TOPS comprises a 500 nm×220 nm Si waveguide with a 2 μm×100 nm Ti heater on top. The gap between the waveguide and the heater is 1 μm. The temperature distribution in the cross section was obtained by solving the conductive heat equation using the COMSOL Multiphysics simulation tool. We considered the thermal constants reported in the literature.20" target="_self" style="display: inline;">20 A nonuniform tetrahedral mesh, with element sizes ranging from 1 to 500 nm, was employed. A conductive heat flux boundary condition with a heat transfer coefficient of 5 W/(m2 K) was set on the surface. The temperature of the remaining boundaries was fixed at 293.15 K (cold).
    (a) Illustration of a TOPS using a metallic heater on top of the waveguide with thermal isolation by etching the top cladding and buried oxide. (b) Cross section of the free-standing TOPS. (c) Simulated temperature distribution of the free-standing TOPS. The considered TOPS comprises a 500 nm×220 nm silicon waveguide with a 2 μm×100 nm Ti heater on top. The gap between the waveguide and the heater is 1 μm. The temperature distribution in the cross section was obtained by solving the conductive heat equation using the COMSOL Multiphysics simulation tool. We considered the thermal constants reported in the literature.20" target="_self" style="display: inline;">20 A nonuniform tetrahedral mesh, with element sizes ranging from 1 to 500 nm, was employed. A conductive heat flux boundary condition with a heat transfer coefficient of 5 W/(m2 K) was set on the boundaries in contact with air. The temperature of the remaining boundaries was fixed at 293.15 K (cold).
    (a) Illustration of a TOPS using a transparent heater directly on top of the waveguide. (b) Cross section of the TOPS. (c) Simulated temperature distribution of the TOPS using an ITO heater. The considered TOPS comprises a 500 nm×220 nm silicon waveguide with a 2 μm×100 nm ITO heater on top. The gap between the waveguide and the heater is 100 nm. The temperature distribution in the cross section was obtained by solving the conductive heat equation using the COMSOL Multiphysics simulation tool. We considered the thermal constants reported in the literature.20" target="_self" style="display: inline;">20 A nonuniform tetrahedral mesh, with element sizes ranging from 1 to 500 nm, was employed. A conductive heat flux boundary condition with a heat transfer coefficient of 5 W/(m2 K) was set on the surface. The temperature of the remaining boundaries was fixed at 293.15 K (cold).
    (a) Illustration of a TOPS utilizing a silicon-doped heater, where the heat generation occurs within the doped silicon waveguide. In this configuration, the waveguide is of the rib type, with several silicon-doped heaters arranged in electrical parallel to minimize total resistance. Metallic contacts are linked to the silicon waveguide via silicon-doped strips. (b) Simulated temperature distribution within the TOPS, consisting of a 500 nm×220 nm silicon waveguide atop a 100-nm-thick slab, with 1 μm-thick SiO2 cladding. Temperature distribution analysis was performed by solving the conductive heat equation with the COMSOL Multiphysics simulation tool, considering the waveguide core as the heat source, based on thermal constants from the literature.20" target="_self" style="display: inline;">20 A nonuniform tetrahedral mesh, with element sizes ranging from 1 to 500 nm, was employed. A conductive heat flux boundary condition, with a heat transfer coefficient of 5 W/(m2 K), was applied on the surface, while the temperature for all other boundaries was fixed at 293.15 K (cold). (c), (d) Cross-sectional views of the TOPS featuring (c) direct current injection and (d) a pn junction setup.
    (a) Illustration of a TOPS using folded waveguides based on a spiral waveguide with a wide heater on top. (b) Cross section of the folded TOPS. The folded waveguide needs to be designed to avoid cross-coupling between adjacent waveguides.
    (a) Illustration of a TOPS utilizing a multimode waveguide where light is recycled N times through a multipass structure, demonstrating how power consumption decreases as the number of passes increases. (b) Cross section of the TOPS within the multimode waveguide. (c) Depiction of optical mode conversion as a function of the multipass structure’s length. Light enters the structure in the fundamental mode and, after N passes, is converted to the Nth-order mode before being output from the structure and reverted to the fundamental mode.
    • Table 1. Summary of basic experimental TOPSs using metallic heaters in SiPh.

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      Table 1. Summary of basic experimental TOPSs using metallic heaters in SiPh.

      Ref.Structure/heater metalOptimization strategyLoss (dB)Pπ(mW)Switching time (μs)aFOM (mW μs)Length (μm)
      21MZI/CrAuNone32b503.5175700
      22MZI/N/ANone12b2356014×1032500
      23MZI/N/ANone22b901009000140
      24MRR/TiAir trenchesN/A101010030
      25MZI/PtNone16b4030120040
      26MRR/NiPulse pre-emphasis<1164c /<1d64c /<16d60
      27MZI/PtFree-standing2.8b0.5414176100
      28MRR/TiFree-standing<11.217020450
      29MZI/NiSiClose heater<120360200
      30MZI/TiNFree-standing<10.49144711000
      31MRR/NiSiFree-standing<12.9358103850
      32Microdisk NiCrClose heater and pulse pre-emphasis<1122.9c/0.085d35c/1d60
      33MZI/WNone<12245990200
      19MZI/TiNGeometry<1307210320
    • Table 2. Summary of basic experimental TOPSs using transparent heaters in SiPh.

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      Table 2. Summary of basic experimental TOPSs using transparent heaters in SiPh.

      Ref.Structure/heater materialGap (nm)Loss (dB)Pπ (mW)Switching time (μm)aFOM (mWμs)Length (μm)
      35MZI/metal + graphene05b>5020>1000120
      35Microdisk/graphene0<123.513305.55
      36MRR/graphene240<1113.538.555
      37MZI-PhCW/graphene111.12<1<220
      38PhCC/graphene02N/A1.5N/A5
      39MRR/CNTs0N/A14.54.565.3315
      40MRR/MoS2300.427.525187.5283
      20MZI/ITO6600.019.75.250.4450
      41MZI/IHO00.59.60.989.4110
    • Table 3. Summary of basic experimental TOPSs using doped silicon heaters in SiPh.

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      Table 3. Summary of basic experimental TOPSs using doped silicon heaters in SiPh.

      Ref.StructureDopant/concentrationCurrent injectionLoss (dB)Pπ(mW)Switching time (μm)aFOM (mW  μs)Length (μm)
      44MZIp-type (B)/1018  cm3Direct360.63.6115
      45MRRn-type (As)/1.8×1018  cm3Direct0.512.72.430.510
      46MZIp-type (B)/7×1017  cm3Direct0.22537561.6
      47MZIn-type (N/A)/N/AParallel heatersN/A255125100
      48MRRp- and n-type (N/A)/2×1018 and 4×1017  cm3Direct with pn junctionN/A19.50.457.8125
      49MRRn-type (As)/4×1013  cm2Direct with pn junction2.5144563.4
      50MZIp- and n-type (N/A)/N/AParallel heater with pn junction1.6b20.997.5200050
      19MZIn-type (P)/1020  cm3Parallel heaters<0.422.82.250.2320
      51MZIp-type (P)/1018  cm3Direct22925835
      52MZIp-type (N/A)/1018  cm3Direct0.2422.60.511.315
    • Table 4. Summary of advanced experimental TOPSs using folded waveguides and metallic heaters in SiPh.

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      Table 4. Summary of advanced experimental TOPSs using folded waveguides and metallic heaters in SiPh.

      Ref.StructureNumber of foldsLoss (dB)Pπ (mW)Switching time (μm)aFOM (mWμs)Length (μm)
      54MZI596b6.5149113000
      55MZI92.9b4.2c/0.095d65c/1200d237c/114d2900
      56MZI141.232.563589.62300
      57MZI220.9311331876
    • Table 5. Comparison of mainstream and emerging electro-optic technologies for implementing phase shifters in SiPh.

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      Table 5. Comparison of mainstream and emerging electro-optic technologies for implementing phase shifters in SiPh.

      TechnologyInsertion lossStatic power consumptionSwitching timeFootprintManufacturability
      Silicon TOPSUltralow (<1 dB)Very high (>mW)Very slow (>μs)Large (>100  μm)Excellent
      Silicon PDEHigh (>1 dB)Moderate (>μW)Very fast (<ns)Very large (mm)Excellent
      MEMSLow (1  dB)Ultralow (nW)Slow (μs)Compact (100  μm)Good
      PlasmonicsVery high (>5 dB)Ultralow (nW)Ultrafast (ps)Ultracompact (μm)Limited
      FerroelectricsUltralow (<1 dB)Ultralow (nW)Ultrafast (ps)Very large (mm)Limited
      PCMsLow (1  dB)ZeroSlow (μs)Ultracompact (μm)Limited
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    Jorge Parra, Juan Navarro-Arenas, Pablo Sanchis, "Silicon thermo-optic phase shifters: a review of configurations and optimization strategies," Adv. Photon. Nexus 3, 044001 (2024)

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    Paper Information

    Category: Reviews

    Received: Oct. 10, 2023

    Accepted: May. 9, 2024

    Published Online: May. 27, 2024

    The Author Email: Pablo Sanchis (pabsanki@ntc.upv.es)

    DOI:10.1117/1.APN.3.4.044001

    CSTR:32397.14.1.APN.3.4.044001

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