High-power hybrid GaN-based green laser diodes with ITO cladding layer

Lei Hu; Xiaoyu Ren; Jianping Liu; Aiqin Tian; Lingrong Jiang; Siyi Huang; Wei Zhou; Liqun Zhang; Hui Yang

doi:10.1364/PRJ.381262

Photonics Research, Volume. 8, Issue 3, 279(2020)

High-power hybrid GaN-based green laser diodes with ITO cladding layer

Lei Hu^1,2, Xiaoyu Ren¹, Jianping Liu^1,2、*, Aiqin Tian¹, Lingrong Jiang^1,2, Siyi Huang¹, Wei Zhou¹, Liqun Zhang¹, and Hui Yang^1,2

Author Affiliations

¹Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China

²School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

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CLP Journals

[1] Lingrong Jiang, Jianping Liu, Lei Hu, Liqun Zhang, Aiqin Tian, Wei Xiong, Xiaoyu Ren, Siyi Huang, Wei Zhou, Masao Ikeda, Hui Yang, "Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer," Chin. Opt. Lett. 19, 121404 (2021)

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Lei Hu, Xiaoyu Ren, Jianping Liu, Aiqin Tian, Lingrong Jiang, Siyi Huang, Wei Zhou, Liqun Zhang, Hui Yang, "High-power hybrid GaN-based green laser diodes with ITO cladding layer," Photonics Res. 8, 279 (2020)

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Paper Information

Category: Lasers and Laser Optics

Received: Oct. 23, 2019

Accepted: Dec. 22, 2019

Published Online: Feb. 12, 2020

The Author Email: Jianping Liu (jpliu2010@sinano.ac.cn)

DOI:10.1364/PRJ.381262

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology