Chinese Optics Letters, Volume. 7, Issue 1, 0152(2009)
Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
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[in Chinese], [in Chinese], [in Chinese], "Evolution of surface morphology and photoluminescence characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy," Chin. Opt. Lett. 7, 0152 (2009)
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Received: Feb. 28, 2008
Accepted: --
Published Online: Mar. 4, 2009
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