Development of Separation Film for Frequency Doubling in 278 nm All-Solid-State Laser System

Xiuhua Fu; Cheng Chen; Zhanggui Hu; Shifu Xiong; Jing Zhang; Fei Wang; Chenxin Wang

doi:10.3788/CJL201946.1203002

Chinese Journal of Lasers, Volume. 46, Issue 12, 1203002(2019)

Development of Separation Film for Frequency Doubling in 278 nm All-Solid-State Laser System

Xiuhua Fu¹, Cheng Chen^1、*, Zhanggui Hu^2,3, Shifu Xiong^2,3、**, Jing Zhang¹, Fei Wang¹, and Chenxin Wang^2,3

¹Department of Optics and Electric Engineering, Changchun University of Science and Technology,Jilin, Changchun 130022, China

²Institute of Functional Crystals, Tianjin University of Technology, Tianjin 300384, China

³Tianjin Key Laboratory of Functional Crystal Materials, Tianjin University of Technology, Tianjin 300384, China

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Figures & Tables(20)

Fig. 1. Optical path diagram of frequency doubling modulation of 278 nm all-solid-state laser system

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Fig. 2. X-ray photoelectron spectroscopy of hafnium

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$Optical constants of HfO2 film. (a) Refractive index; (b) extinction coefficient$

Fig. 3. Optical constants of HfO₂ film. (a) Refractive index; (b) extinction coefficient

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Fig. 4. Three-dimensional morphologies of UV-SiO₂ films at different deposition rates. (a) 0.5 nm/s; (b) 0.7 nm/s; (c) 0.9 nm/s

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Fig. 5. Optical constants of thin film materials. (a) HfO₂ film; (b) UV-SiO₂ film

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Fig. 6. Relationship between electric field intensity and film period at film/air interface

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Fig. 7. Theoretically spectral curve of front surface

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Fig. 8. Theoretically spectral curve of back surface

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Fig. 9. Theoretically transmittance spectral curve of double-side design

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Fig. 10. Three-dimensional curves of theoretical design of separation film for frequency doubling at different wavelengths. (a) At 278 nm; (b) at 556 nm

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Fig. 11. Transmission test curves of single-side coating. (a) Front surface; (b) back surface

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Fig. 12. Spectral test curves of double-side coating. (a) Transmittance; (b) reflectivity

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Fig. 13. Measured spectrum as a function of incident angle

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Fig. 14. Laser induced damage threshold

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Table 1. Technical parameters of beam splitter
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Table 1. Technical parameters of beam splitter
Parameter Specification
Substrate JGS1
Incident angle /(°) 45±5
Wavelength /nm 278 556
Transmittance /% ≥98.5 ≤0.5

Table 2. Scheme for oxygen distribution
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Table 2. Scheme for oxygen distribution
No. Flow rate ofO₂-APS /(mL·min^-1) Flow rate ofO₂-HPE /(mL·min^-1)
1 40 10
2 35 15
3 30 20

Table 3. Surface roughness of UV-SiO₂ film at different deposition rates
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Table 3. Surface roughness of UV-SiO₂ film at different deposition rates
Depositionrate /(nm·s^-1) S_a /μm S_q /μm S_z /μm
0.5 0.0022 0.0024 0.0582
0.7 0.0012 0.0012 0.0266
0.9 0.0018 0.0020 0.1364

Table 4. Process parameters of deposition of Hf and UV-SiO₂ films
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Table 4. Process parameters of deposition of Hf and UV-SiO₂ films
Materials Substratetemperature /℃ Degree ofvacuum /(10^-4 Pa) Depositionrate /(nm·s^-1) Flow rate of O₂ /(mL·min^-1)
APS HPE
Hf 180 1 0.25 35 15
UV-SiO₂ 180 1 0.70 5 0

Table 5. Ion source process parameters of Hf and UV-SiO₂
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Table 5. Ion source process parameters of Hf and UV-SiO₂
Materials Biasvoltage /V Coilcurrent /A Dischvoltage /V Dischcurrent /mA Ar flow 1 /(mL·min^-1) Ar flow 2 /(mL·min^-1)
Hf 95 1.45 83 50 5.3 6.5
UV-SiO₂ 160 1.80 130 55 5.0 7.0

Table 6. Damage probability corresponding to laser with different energy densities
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Table 6. Damage probability corresponding to laser with different energy densities
No. Energy density /(J·cm^-2) Damage probability /%
1 7.0 0
2 9.0 0
3 11.0 0
4 13.0 2.5
5 15.0 30.5
6 17.0 46.0
7 19.0 61.5
8 21.0 89.5
9 23.0 100
10 25.0 100

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Xiuhua Fu, Cheng Chen, Zhanggui Hu, Shifu Xiong, Jing Zhang, Fei Wang, Chenxin Wang. Development of Separation Film for Frequency Doubling in 278 nm All-Solid-State Laser System[J]. Chinese Journal of Lasers, 2019, 46(12): 1203002

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