Chinese Optics Letters, Volume. 12, Issue s2, S22206(2014)

Polishing silicon modification layer on silicon carbide surface by ion beam figuring

Weijie Deng
Author Affiliations
  • Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • show less

    Silicon (Si) modification layer on silicon carbide (SiC) surface is widely used in space optical systems. To achieve high-quality optical surface, the technology of ion beam figuring (IBF) is studied. The radio frequency ion beam source is introduced briefly. Then the removal function experiment is studied. The volume removal stability of the IBF reached 97% in 10 h continuous working testing. The parameters of the IBF removal function are calculated by Gaussian fitting including the removal rate and the full-width half-maximum. Then the removal function results are used in practical fabrication. The workpiece is a plane with Si modification layer on SiC surface. After 148 min processing IBF, the final surface error reaches 1.2 nm RMS.

    Tools

    Get Citation

    Copy Citation Text

    Weijie Deng, "Polishing silicon modification layer on silicon carbide surface by ion beam figuring," Chin. Opt. Lett. 12, S22206 (2014)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optical Design and Fabrication

    Received: Mar. 13, 2014

    Accepted: May. 3, 2014

    Published Online: Sep. 5, 2014

    The Author Email:

    DOI:10.3788/col201412.s22206

    Topics