[1] [1] WANG Huilin. One of the development trends of airbne photoelectric system the development direction of multi task integration[C]Collection of papers of weapon optoelectronic infmation technology scientists fum. Beijing: China dnance Society, 2016: 132144.

[2] CARNES J E, KOSONOEKY W F, RAMBERG E G. Free charge transfer in charge coupled devices[J]. Electron Deviees, 19, 798-808(1972).

[3] FRENSLEY W R. Barrier-limited transport in semiconductor devices[J]. IEEE Trans on Electron Devices, 30, 1619-1623(1983).

[4] [4] IESAKA M, OSAWA S, UYA S, et al. Analysis of ge transfer loss in dual readout registers used f HDTV CCD image sens[C]1988 International conference on so1idstate devices material. Tokyo: The Japan Society of Applied Physics, 1988: 359362.

[5] [5] HOLST G C. CCD arrays, cameras displays[M]. USA: SPIE Optical Engineering Press, 1998.

[6] [6] James Howe. Infrared optoelectronic systems manual: Volume 4 optoelectronic system design, analysis testing[M]. Translated by 8358 Institute of the third Academy of Astronautics. Tianjin: Published by 8358 Institute of the third Academy of Astronautics, 2001: 1216.

[7] YANG X D, GAMAL A E. Comparative analysis of SNR for image sensors with enhanced dynamic range[J]. SPIE, 3649, 197-211(1999).

[8] CHEN T, CATRYSSE P B, GAMAL A E et al. How small should pixel size be?[J]. SPIE, 3965, 451-459(2000).

[9] [9] [9]王惠林, 刘吉龙, 吴雄雄, 等航空光电侦察图像质量影响因素分析应用光学202142581782910.5768/JAO202142.0502001WANGHuilin, LIUJilong, WUXiongxiong, et alAnalysis of image quality influencing factors for aerial electro-optical detectionJournal of Applied Optics202142581782910.5768/JAO202142.0502001

[10] [10] HOLST G C. Electrooptical imaging system perfmance[M]. 5th ed. Washington DC: JCD Publishing, 2008.

[11] DRIGGERS R G, VOLLMERHAUSEN R H, REYNOLDS J P et al. Infrared detector size: how low should you go?[J]. Optical Engineering, 51, 063202(2012).

[12] GRAVRAND O, BAIER N, FERRON A et al. MTF study of planar small pixel pitch quantum IR detectors[J]. SPIE, 9070, 907036(2014).

[13] [13] NIXON O, WU L , LEDGERWOOD M , et al. 2.5 µm pixel linear CCD[ROL]. Canada: DALSA Inc. . [20070520]. http:www.imagesenss.g

[14] [14] CLARK R N. Digital cameras: Does pixel size matter facts in choosing a digital camera(does sens size matter)[MOL]. USA: Clarkvision. com. [20050218]. http:www.clarkvision.comarticles.

[15] DAVIS L, MRINAL I, LARRY M. The goodrich 3rd generation DB-110 system: Successful flight test on the F-16 aircraft[J]. SPIE, 6546, 654607-1(2007).

[16] [16] SCHRODER D. Semiconduct material device acterization[M]. USA: John Wiley Sons Inc. , 1990.

[17] GUNAPALA S D, KEO S A, TING D Z et al. Modulation transfer function measurements of type-II mid-wavelength and long-wavelength infrared superlattice focal plane arrays[J]. Infrared Physics & Technology, 96, 251-261(2019).

[18] APPLETON B, HUBBARD T, GLASMANN A et al. Parametric numerical study of the modulation transfer function in small-pitch InGaAs/InP infrared arrays with refractive microlenses[J]. Optics Express, 26, 5310-5326(2018).

[19] HOLST G C, DRIGGERS R G. Small detectors in infrared system design[J]. Optical Engineering, 51, 096401(2012).

[20] FARRELL J, XIAO F, KAVUSI S. Resolution and light sensitivity tradeoff with pixel size[J]. SPIE:The International Society for Optical Engineering, 6069, 211-218(2006).

[21] [21] [21]王惠林, 宁飞, 冯涛基于TTP准则的光电侦察设备作用距离评估应用光学201940Sup17WANGHuilin, NINGFei, FENGTaoEvaluation of operational distance of photoelectric detection equipment based on TTP criterionJournal of Applied Optics201940Sup17

[22] [22] HOLST G C. Electrooptical imaging system perfmance[M]. Translated by YAN Jixiang, YU Xin, XIE Tianbao, et al. 4th ed. Beijing: National Defense Industry Press, 2015: 136141.

[23] HOLST G C. Imaging system performance based upon F/d[J]. Optical Engineering, 46, 103204(2007).

[24] HOLST G C. An engineer's approach to system performance[J]. SPIE, 6543, 84-91(2007).