Fig. 1. Technical scheme of the laser injection system of the SG-Ⅱ facility

Fig. 2. Schematic layout of the front-end system structure of the high-power laser device based on time division multiplexing technology

Fig. 3. Single pulse selection principle for RF switch

Fig. 4. Schematic layout of the comparison scheme

Fig. 5. Output of the comparison scheme. (a) Output of sequential optical pulse; (b) output of the sequential electric pulse in the complete time domain after electrical amplification; (c) output detail of the sequential optical pulse in the complete time domain

Fig. 6. Output of the third short pulse in both schemes. (a) In the complete time domain; (b) detail near the short pulse

Fig. 7. Electrical pulse waveforms for AWG direct output and RF switch output. (a) Normalized waveforms; (b) waveform stability measurement

Fig. 8. Four pulses output with independent time shaping

Fig. 9. Input and output of complex pulse with independent time shaping capability. (a) Schematic diagram of AWG’s design pulse;

Fig. 10. Output of optical pulse with high contrast ratio

Fig. 11. Switch’s control signal coupled to the output. (a) Control signals 1 and 2 are both off; (b) control signal 1 is on; (c) control signal 2 is on; (d) control signals 1 and 2 are both on

Fig. 12. Effect of control signal of RF switch on electric pulses after RF amplifiers

Fig. 13. Pulse rising edge of 15∶1 shaping electric pulse after electrical amplification