Design for Solar Short Extreme Ultraviolet Dual-Waveband Imaging Spectrometer

Ziwen Duan; Yangguang Xing; Jilong Peng; Lei Yan; Yifan Huang; Yue Liu; Lin Li

doi:10.3788/AOS231371

Acta Optica Sinica, Volume. 44, Issue 12, 1223001(2024)

Design for Solar Short Extreme Ultraviolet Dual-Waveband Imaging Spectrometer

Ziwen Duan¹, Yangguang Xing^1,3、*, Jilong Peng², Lei Yan⁴, Yifan Huang¹, Yue Liu^1、**, and Lin Li¹

Author Affiliations

¹School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China

²Beijing Institute of Spacecraft Environment Engineering, Beijing 100094, China

³Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210023, Jiangsu , China

⁴Beijing Institute of Astronautical Systems Engineering, Beijing 100076, China

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Figures & Tables(16)

Fig. 1. Operating principle and optical layout of solar short-EUV dual-waveband imaging spectrometer

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Fig. 2. Schematic of TVLS grating

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Fig. 3. Optical optimization flow chart of solar short-EUV dual-waveband imaging spectrometer

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Fig. 4. Optical layout of solar short-EUV dual-waveband imaging spectrometer

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Fig. 5. TVLS grating. (a) Substrate surface sag map; (b) curve of ruling density distribution

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Fig. 6. Focusing imaging performance evaluation of solar short-EUV dual-waveband imaging spectrometer on image plane. (a) Curves of RMS radius variation with wavelength in 17-21 nm waveband; (b) curves of RMS radius variation with wavelength in 28-32 nm waveband; (c) curves of RMS radius variation with off-axis field of view in 17-21 nm waveband; (d) curves of RMS radius variation with off-axis field of view in 28-32 nm waveband

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Fig. 7. MTF of solar short-EUV dual-waveband imaging spectrometer under different wavelengths. (a) λ=17 nm; (b) λ=21 nm; (c) λ=28 nm; (d) λ=32 nm

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$Diffraction enclosed energy to evaluate system’s spatial resolution. (a) λ=17 nm; (b) λ=21 nm; (c) λ=28 nm; (d) λ=32 nm$

Fig. 8. Diffraction enclosed energy to evaluate system’s spatial resolution. (a) λ=17 nm; (b) λ=21 nm; (c) λ=28 nm; (d) λ=32 nm

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Fig. 9. Simulation of slit imaging based on Monte Carlo ray tracing method. (a) Slit images of different spectral lines; (b) relative intensity distribution curve of slit image along dispersive direction

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Fig. 10. Spectral distortion (Smile) and spatial distortion (Keystone). (a) Smile in 17-21 nm; (b) Smile in 28-32 nm; (c) Keystone in 17-21 nm; (d) Keystone in 28-32 nm

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Table 1. Manin emitting ions of EUV spectral lines and their corresponding temperature range
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Table 1. Manin emitting ions of EUV spectral lines and their corresponding temperature range
Spectralrange /nm Main emitting ion lg (T /K)
17-21 Fe IX-XXIV, Ca XIV-XVII, O IV-V 5.4-7.3
28-32 Fe XI-XVI, Mg VII-VIII, Ca XVII-XVIII, Ni XVI-XVIII, S XI-XII, Si VIII-IX, He II, Si XI 4.7-6.7

Table 2. Technical specifications of imaging spectrometer

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Table 2. Technical specifications of imaging spectrometer

Performance parameter	Design value
Wavelength bands /nm	17-21 & 28-32
Temperature coverage /MK	0.05-20.00
Spectral dispersion /(nm/pixel)	≤0.003
Spectral resolution /nm	≤0.006
Spatial plate scale /[(″)/pixel]	≤0.5
Spatial resolution /(″)	≤1.0
Time resolution /s	≤30
Slit field-of-view (FOV) /(′)	≥12
Pixel size /μm	16
Optical volume /(mm×mm×mm)	≤2000×280×115

Table 3. Initial structural parameters of solar short-EUV dual-waveband imaging spectrometer
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Table 3. Initial structural parameters of solar short-EUV dual-waveband imaging spectrometer
Term Value
f_T /mm 1650.1
r_A /mm 380.95
β 4
i /（°） 0.8182
d₀ /μm 5/21
m +1
R /mm 583.35
ρ /mm 608.99

Table 4. Design indicators and optical component parameters of solar short-EUV dual-waveband imaging spectrometer

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Table 4. Design indicators and optical component parameters of solar short-EUV dual-waveband imaging spectrometer

Type	Parameter	Value
Instrumentsystem	Spectral resolution /nm	0.00526@17-21 nm
	Spectral resolution /nm	0.00512@28-32 nm
	Spatial resolution /(″)	1
	System focal length /mm	6600
	Optical volume /(mm×mm×mm)	2000×280×115
Telescope	Entrance aperture /mm	115
	R_T /mm	3304.288
	Conic	-1
	Δ /mm	80
	f_T /mm	1652.144
Slit	Slits width /(″)	1, 2, 4, 8 and 20
	Slit length /(′)	12
	Raster coverage /(′)	±5
TVLS grating	m	+1
	d₀ /μm	5/21
	i /(°)	0.222
	r_A /mm	347.855
	Β	4.034×
	R /mm	556.424
	ρ/mm	557.482
	b₂ /mm^-2	0.041122
	Ruling area /(mm×mm)	π×15.6×15.6
	Groove density /mm^-1	4200+0.6208y
Two independent detectors	Tilt angle in 17-21 nm and 28-32 nm wavebands /(°)	11.589

Table 5. Key components tolerance analysis parameters of solar short-EUV dual-waveband imaging spectrometer

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Table 5. Key components tolerance analysis parameters of solar short-EUV dual-waveband imaging spectrometer

Component	Tolerance item	Values of tolerance
Primary mirror	Surface irregularity(RMS) /nm	±λ/40 (λ=632.8 nm)
	Conic	±0.008
	Radius of curvature /mm	±3.0
	Element decenter /μm	±40
	Element tilt /(″)	±36
TVLS grating	Surface irregularity(RMS) /nm	±λ/40 (λ=632.8 nm)
	Line density /(groove/mm)	±4
	Radius of curvature /mm	±0.5
	Element decenter /μm	±20
	Element tilt /(″)	±54
Slit	Element decenter /μm	±20
Slit	Element tilt /(°)	±0.04

Table 6. Five worst offenders of the optical system at 19 nm & 30 nm wavelength

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Table 6. Five worst offenders of the optical system at 19 nm & 30 nm wavelength

Condition	Type	Element	Value	Criterion	Change
Central wavelength of 17-21 nm channel @ 19 nm	TETY	Primary mirror	-0.01	0.006142	0.000727
	TETY	Primary mirror	0.01	0.006125	0.000711
	TCON	Primary mirror	0.008	0.005689	0.000275
	TETX	TVLS grating	-0.015	0.005525	0.000111
	TETX	TVLS grating	0.015	0.005446	3.16×10^-5
Central wavelength of 28-32 nm channel @ 30 nm	TETY	Primary mirror	-0.01	0.007295	0.000704
	TETY	Primary mirror	0.01	0.007094	0.000503
	TCON	Primary mirror	0.008	0.006862	0.000271
	TETX	TVLS grating	-0.015	0.006727	0.000137
	TPAR	TVLS grating	0.5	0.006641	5.09×10^-5

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Ziwen Duan, Yangguang Xing, Jilong Peng, Lei Yan, Yifan Huang, Yue Liu, Lin Li. Design for Solar Short Extreme Ultraviolet Dual-Waveband Imaging Spectrometer[J]. Acta Optica Sinica, 2024, 44(12): 1223001

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Paper Information

Category: Optical Devices

Received: Aug. 7, 2023

Accepted: Oct. 9, 2023

Published Online: Jun. 7, 2024

The Author Email: Xing Yangguang (xyg@bit.edu.cn), Liu Yue (liuyue@bit.edu.cn)

DOI:10.3788/AOS231371

CSTR:32393.14.AOS231371

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Manin emitting ions of EUV spectral lines and their corresponding temperature range

Table 1. Manin emitting ions of EUV spectral lines and their corresponding temperature range

Table 2. Technical specifications of imaging spectrometer

Table 2. Technical specifications of imaging spectrometer

Table 3. Initial structural parameters of solar short-EUV dual-waveband imaging spectrometer

Table 3. Initial structural parameters of solar short-EUV dual-waveband imaging spectrometer

Table 4. Design indicators and optical component parameters of solar short-EUV dual-waveband imaging spectrometer

Table 4. Design indicators and optical component parameters of solar short-EUV dual-waveband imaging spectrometer

Table 5. Key components tolerance analysis parameters of solar short-EUV dual-waveband imaging spectrometer

Table 5. Key components tolerance analysis parameters of solar short-EUV dual-waveband imaging spectrometer

Table 6. Five worst offenders of the optical system at 19 nm & 30 nm wavelength

Table 6. Five worst offenders of the optical system at 19 nm & 30 nm wavelength