Journal of Synthetic Crystals, Volume. 53, Issue 7, 1186(2024)
Effect of Electromagnetic Directional Solidification and Purification on Primary Silicon Enrichment Behavior in Al-50%Si Alloy
[1] [1] RAMREZ-MRQUEZ C, OTERO M V, VZQUEZ-CASTILLO J A, et al. Process design and intensification for the production of solar grade silicon[J]. Journal of Cleaner Production, 2018, 170: 1579-1593.
[2] [2] ALEMANY C, TRASSY C, PATEYRON B, et al. Refining of metallurgical-grade silicon by inductive plasma[J]. Solar Energy Materials and Solar Cells, 2002, 72(1/2/3/4): 41-48.
[3] [3] WANG Z, GE Z, LIU J H, et al. The mechanism of boron removal from silicon alloy by electric field using slag treatment[J]. Separation and Purification Technology, 2018, 199: 134-139.
[4] [4] WEN S T, JIANG D C, SHI S, et al. Determination and controlling of crystal growth rate during silicon purification by directional solidification[J]. Vacuum, 2016, 125: 75-80.
[5] [5] JIANG D C, SHI S, TAN Y, et al. Research on distribution of aluminum in electron beam melted silicon ingot[J]. Vacuum, 2013, 96: 27-31.
[6] [6] ZHENG S S, ABEL ENGH T, TANGSTAD M, et al. Separation of phosphorus from silicon by induction vacuum refining[J]. Separation and Purification Technology, 2011, 82: 128-137.
[7] [7] YOSHIKAWA T, MORITA K. An evolving method for solar-grade silicon production: solvent refining[J]. JOM, 2012, 64(8): 946-951.
[8] [8] WANG H W. Research on preparation of high purity silicon by metallurgical method[D].Dalian: Dalian University of Technology, 2013: 32-35 (in Chinese).
[9] [9] LI Y L, CHEN J. Boron and phosphorus removal during high purity hypereutectic Al-Si solidification[J]. Metals and Materials International, 2020, 26(4): 526-531.
[10] [10] LI Y L, BAN B Y, LI J W, et al. Effect of cooling rate on phosphorus removal during Al-Si solvent refining[J]. Metallurgical and Materials Transactions B, 2015, 46(2): 542-544.
[11] [11] HU L, WANG Z, GONG X Z, et al. Purification of metallurgical-grade silicon by Sn-Si refining system with calcium addition[J]. Separation and Purification Technology, 2013, 118: 699-703.
[12] [12] HUANG L Q, LAI H X, LU C H, et al. Segregation behavior of iron in metallurgical grade silicon during SiCu solvent refining[J]. Vacuum, 2016, 129: 38-44.
[13] [13] KHAJAVI L T, MORITA K, YOSHIKAWA T, et al. Thermodynamics of boron distribution in solvent refining of silicon using ferrosilicon alloys[J]. Journal of Alloys and Compounds, 2015, 619: 634-638.
[14] [14] YIN Z, OLIAZADEH A, ESFAHANI S, et al. Solvent refining of silicon using nickel as impurity getter[J]. Canadian Metallurgical Quarterly, 2011, 50(2): 166-172.
[15] [15] SRIVASTAVA N, CHAUDHARI G P, QIAN M. Grain refinement of binary Al-Si, Al-Cu and Al-Ni alloys by ultrasonication[J]. Journal of Materials Processing Technology, 2017, 249: 367-378.
[16] [16] SAKIANI H, TABAIAN S H, CHEN J. Effect of calcium addition on the silicon purification in the presence of low concentration of iron[J]. Journal of Alloys and Compounds, 2020, 830: 154112.
[17] [17] JOHNSTON M D, KHAJAVI L T, LI M, et al. High-temperature refining of metallurgical-grade silicon: a review[J]. JOM, 2012, 64(8): 935-945.
[18] [18] LEI Y, MA W H, SUN L E, et al. Effects of small amounts of transition metals on boron removal during electromagnetic solidification purification of silicon with Al-Si solvent[J]. Separation and Purification Technology, 2016, 162: 20-23.
[19] [19] JIE J C, ZOU Q C, SUN J L, et al. Separation mechanism of the primary Si phase from the hypereutectic Al-Si alloy using a rotating magnetic field during solidification[J]. Acta Materialia, 2014, 72: 57-66.
[20] [20] LI J Y, WANG L, NI P, et al. Growth of bulk Si from Si-Al alloy by temperature gradient zone melting[J]. Materials Science in Semiconductor Processing, 2017, 66: 170-175.
[21] [21] HAQUE M, MALEQUE M. Effect of process variables on structure and properties of aluminium-silicon piston alloy[J]. Journal of Materials Processing Tech, 1998, 77(1): 122-128.
[22] [22] OBINATA I, KOMATSU N. Method of refining silicon by alloying—Experiments in semi-industrial scale[J]. Journal of the Japan Institute of Metals and Materials, 18(5): 283-285.
[23] [23] GU X, YU X G, YANG D R. Low-cost solar grade silicon purification process with Al-Si system using a powder metallurgy technique[J]. Separation and Purification Technology, 2011, 77(1): 33-39.
[24] [24] ZOU Q C, JIE J C, SUN J L, et al. Effect of Si content on separation and purification of the primary Si phase from hypereutectic Al-Si alloy using rotating magnetic field[J]. Separation and Purification Technology, 2015, 142: 101-107.
[25] [25] LI J W, GUO Z C, TANG H Q, et al. Si purification by solidification of Al-Si melt with super gravity[J]. Transactions of Nonferrous Metals Society of China, 2012, 22(4): 958-963.
[26] [26] YOSHIKAWA T, MORITA K. Refining of Si by the solidification of Si-Al melt with electromagnetic force[J]. ISIJ International, 2005, 45(7): 967-971.
[27] [27] GRIFFITHS W D, MCCARTNEY D G. The effect of electromagnetic stirring during solidification on the structure of Al-Si alloys[J]. Materials Science and Engineering: A, 1996, 216(1/2): 47-60.
[28] [28] YOSHIKAWA T, MORITA K. Removal of B from Si by solidification refining with Si-Al melts[J]. Metallurgical and Materials Transactions B, 2005, 36(6): 731-736.
[29] [29] YOSHIKAWA T, MORITA K. Solid solubilities and thermodynamic properties of aluminum in solid silicon[J]. Journal of the Electrochemical Society, 2003, 150(8): G465.
[30] [30] YOSHIKAWA T, MORITA K. Removal of phosphorus by the solidification refining with Si-Al melts[J]. Science and Technology of Advanced Materials, 2003, 4(6): 531-537.
[31] [31] XUE H Y, LV G Q, MA W H, et al. Separation mechanism of primary silicon from hypereutectic Al-Si melts under alternating electromagnetic fields[J]. Metallurgical and Materials Transactions A, 2015, 46(7): 2922-2932.
[32] [32] YU W Z, MA W H, L G Q, et al. Si purification by enrichment of primary Si in Al-Si melt[J]. Transactions of Nonferrous Metals Society of China, 2013, 23(11): 3476-3481.
[33] [33] BAN B Y, LI Y L, ZUO Q X, et al. Refining of metallurgical grade Si by solidification of Al-Si melt under electromagnetic stirring[J]. Journal of Materials Processing Technology, 2015, 222: 142-147.
[34] [34] GAO M M, QI X Y, GAO A, et al. Effect of cooling rate on the microstructure and impurity of primary silicon in Al-30wt%Si alloy[J]. Journal of Synthetic Crystals, 2020, 49(6): 1088-1093 (in Chinese).
[35] [35] QIANG L, GAO A, ZHAO X, et al. Effect of semi-solid treatment on the microstructure of primary silicon in Al-50wt%Si alloy[J]. Journal of Synthetic Crystals, 2019, 48(7): 1293-1297 (in Chinese).
[36] [36] GAO M M, ZHAO X, GAO A, et al. Effect of Si content on the morphology evolution of the Si primary dendrites in Al-Si alloy solvent refining process[J]. Silicon, 2022, 14(9): 4501-4508.
[37] [37] HE Y F. Study on separation of primary silicon from hypereutectic Al-Si melt during electromagnetic directional solidification[D].Kunming: Kunming University of Science and Technology, 2019 (in Chinese).
Get Citation
Copy Citation Text
LIU Jiaxu, ZHANG Yintao, TANG Hong, CHEN Jiahui, CHEN Guangyu, HE Zhanwei, ZHAO Ziwei, GAO Mangmang. Effect of Electromagnetic Directional Solidification and Purification on Primary Silicon Enrichment Behavior in Al-50%Si Alloy[J]. Journal of Synthetic Crystals, 2024, 53(7): 1186
Category:
Received: Mar. 3, 2024
Accepted: --
Published Online: Aug. 22, 2024
The Author Email: Mangmang GAO (gaomm@nxu.edu.cn)
CSTR:32186.14.