Laser & Optoelectronics Progress, Volume. 57, Issue 13, 131601(2020)

Control of Goos-Hänchen Shift Based on Graphene/Hexagonal Boron Nitride Heterostructure

Fangyuan Lu, Xingbin Yan, Wei Lin, and Zhiwei Zheng*
Author Affiliations
  • College of Physics and Electronic Science, Hunan Normal University, Changsha, Hunan 410081, China
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    Figures & Tables(6)
    Graphene-hBN heterostructure
    Dielectric constant of hBN and reflectance of structure with different wavelengths. (a) Real and imaginary parts of dielectric constant of hBN; (b) reflectance
    Variation in reflectance, reflection phase and GH shift with incident angle under the different Ef. (a) Reflectance; (b) reflection phase; (c) GH shift
    Variation in reflectance, reflection phase and GH shift with incident angle under the number of graphene layers. (a) Reflectance; (b) reflection phase; (c) GH shift
    Two-dimensional pseudo-color distribution diagram plot of GH shift versus incident angle and thickness of hBN. (a) d=1.20~1.53 μm; (b) d=1.54~1.80 μm
    Variation curve of GH shift with hBN thickness
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    Fangyuan Lu, Xingbin Yan, Wei Lin, Zhiwei Zheng. Control of Goos-Hänchen Shift Based on Graphene/Hexagonal Boron Nitride Heterostructure[J]. Laser & Optoelectronics Progress, 2020, 57(13): 131601

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    Paper Information

    Category: Materials

    Received: Jun. 26, 2019

    Accepted: Oct. 10, 2019

    Published Online: Jul. 9, 2020

    The Author Email: Zhiwei Zheng (zhzhengzhiwei@163.com)

    DOI:10.3788/LOP57.131601

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