Laser & Optoelectronics Progress, Volume. 57, Issue 13, 131601(2020)
Control of Goos-Hänchen Shift Based on Graphene/Hexagonal Boron Nitride Heterostructure
Fig. 2. Dielectric constant of hBN and reflectance of structure with different wavelengths. (a) Real and imaginary parts of dielectric constant of hBN; (b) reflectance
Fig. 3. Variation in reflectance, reflection phase and GH shift with incident angle under the different Ef. (a) Reflectance; (b) reflection phase; (c) GH shift
Fig. 4. Variation in reflectance, reflection phase and GH shift with incident angle under the number of graphene layers. (a) Reflectance; (b) reflection phase; (c) GH shift
Fig. 5. Two-dimensional pseudo-color distribution diagram plot of GH shift versus incident angle and thickness of hBN. (a) d=1.20~1.53 μm; (b) d=1.54~1.80 μm
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Fangyuan Lu, Xingbin Yan, Wei Lin, Zhiwei Zheng. Control of Goos-Hänchen Shift Based on Graphene/Hexagonal Boron Nitride Heterostructure[J]. Laser & Optoelectronics Progress, 2020, 57(13): 131601
Category: Materials
Received: Jun. 26, 2019
Accepted: Oct. 10, 2019
Published Online: Jul. 9, 2020
The Author Email: Zhiwei Zheng (zhzhengzhiwei@163.com)