High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

Lixia Nie; Yan Zhang; Shilin Xian; Jun Qin; Huili Wang; Lei Bi

doi:10.3788/LOP56.152302

Laser & Optoelectronics Progress, Volume. 56, Issue 15, 152302(2019)

High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

Lixia Nie^1,2, Yan Zhang^1,2, Shilin Xian^1,2, Jun Qin^1,2, Huili Wang^1,2, and Lei Bi^1,2、*

¹ National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China

² School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China

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Figures & Tables(7)

Fig. 1. Permittivity as a function of electron concentration for four kinds of materials. (a) Real parts; (b) imaginary parts

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Fig. 2. Silicon-based optical waveguide phase shifter. (a) Structure of proposed TCO-based optical waveguide phase shifter; (b) permittivity distribution of HfO2/TCO interface; (c) real and (d) imaginary parts of permittivity on gate voltage of cross-section cumulative layer of CdO film as functions of coordinate

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Fig. 3. Device length L2π, absorption coefficient α, and insertion loss iloss, 2π of proposed TCO-based phase shifter as functions of gate voltage for achieving 2π-phase shift. (a)(b) Single-layer model; (c)(d) multi-layer model

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Fig. 4. Performance comparative analysis of TCO-based phase shifters. Distributions of |E|2 of CdO-based phase shifter at gate voltages of (a) Vg= 0 V and (b) Vg= 1.4 V; distributions of (c) Hx and (d) Ey of TM mode at gate voltage of 1.4 V; distributions of electric-field component along central white dot line in Fig. 4(c) at different gate voltages for (e) SnO-based and (f) CdO-based waveguide phase shifters; (g) real and (h) imaginary parts of permittivity of accumulation layer TCOacc of waveguide ph

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Fig. 5. Influences of device structural parameters on phase shifter performance. (a) CdO thickness; (b) width and height of silicon-based waveguide

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Table 1. Optical performance parameters of four kinds of TCO materials

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Table 1. Optical performance parameters of four kinds of TCO materials

TCOmaterial	Band gap /eV	Effective massm^*/m_e	Mobility μ /(cm²·V^-1·s^-1)	$\begin{matrix} ε_{\infty} \end{matrix}$	Static dielectricconstant ε_s	Reference
CdO	2.4	0.18	300	5.40	18.1	[23]
ITO	3.8	0.35	50	4.00	9.3	[16]
SnO	3.6	0.30	50	3.90	12.5	[24]
ZnO	3.4	0.28	35	3.85	8.3	[25]

Table 2. Performance parameters of silicon-based waveguide phase shifters based on different TCO materials when generating 2π-phase shift

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Table 2. Performance parameters of silicon-based waveguide phase shifters based on different TCO materials when generating 2π-phase shift

TCOmaterial	Single-layer model				Multi-layer model
TCOmaterial	i_{loss, 2π} /dB	V_{g, opt} /V	L /μm	V_πL /(V·cm)	i_{loss, 2π} /dB	V_{g, opt} /V	L /μm	V_πL /(V·cm)
CdO	2.37	2.0	155	0.016	2.803	1.4	253	0.018
ITO	6.9	1.6	323	0.026	8.034	1.2	437	0.028
SnO	7.9	1.6	242	0.019	9.250	1.2	377	0.022
ZnO	12.6	1.4	254	0.018	14.80	0.8	511	0.020

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Lixia Nie, Yan Zhang, Shilin Xian, Jun Qin, Huili Wang, Lei Bi. High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides[J]. Laser & Optoelectronics Progress, 2019, 56(15): 152302

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Paper Information

Category: Optical Devices

Received: Jan. 28, 2019

Accepted: Mar. 7, 2019

Published Online: Aug. 5, 2019

The Author Email: Lei Bi (bilei@uestc.edu.cn)

DOI:10.3788/LOP56.152302

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology