Progress of Doping in Ga<sub>2</sub>O<sub>3</sub> Materials

Dan Wang; Xiaodan Wang; Hai Ma; Huajun Chen; Hongmin Mao; Xionghui Zeng

doi:10.3788/LOP202158.1516025

Laser & Optoelectronics Progress, Volume. 58, Issue 15, 1516025(2021)

Progress of Doping in Ga₂O₃ Materials

Dan Wang¹, Xiaodan Wang^1、*, Hai Ma¹, Huajun Chen¹, Hongmin Mao¹, and Xionghui Zeng²

¹Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China

²Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

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Dan Wang, Xiaodan Wang, Hai Ma, Huajun Chen, Hongmin Mao, Xionghui Zeng. Progress of Doping in Ga₂O₃ Materials[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516025

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Paper Information

Category: Materials

Received: Mar. 11, 2021

Accepted: May. 8, 2021

Published Online: Jul. 28, 2021

The Author Email: Xiaodan Wang (xdwang0416@163.com)

DOI:10.3788/LOP202158.1516025

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology