Journal of Synthetic Crystals, Volume. 50, Issue 2, 273(2021)

First-Principles Calculations of P and As Doped Mn4Si7

ZHONG Yi, ZHANG Jinmin, WANG Li, HE Teng, XIAO Qingquan, and XIE Quan
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    References(5)

    [1] [1] KAIBE H, AOYAMA I, MUKOUJIMA M, et al. Development of thermoelectric generating stacked modules aiming for 15% of conversion efficiency[C]//ICT 2005.24th International Conference on Thermoelectrics, 2005. June 19-23, 2005, Clemson, SC, USA. IEEE, 2005: 242-247.

    [2] [2] ZHOU A J, CUI H G, LI J Z, et al. Bulk higher manganese silicide thermoelectric materials and modules[J]. Procedia Engineering, 2012, 27: 94-102.

    [3] [3] BOST M, MAHAN J E. An optical determination of the bandgap of the most silicon-rich manganese silicide phase[J]. Journal of Electronic Materials, 1987, 16(6): 389-395.

    [4] [4] GAO Y, SHAO G S, LI Q, et al. Microstructural and optical properties of semiconducting MnSi1.7 synthesized by ion implantation[J]. Japanese Journal of Applied Physics, 2007, 46(9A): 5777-5779.

    [5] [5] TEICHERT S, KILPER R, ERBEN J, et al. Preparation and properties of thin polycrystalline MnSi1.73 films[J]. Applied Surface Science, 1996, 104/105: 679-684.

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    ZHONG Yi, ZHANG Jinmin, WANG Li, HE Teng, XIAO Qingquan, XIE Quan. First-Principles Calculations of P and As Doped Mn4Si7[J]. Journal of Synthetic Crystals, 2021, 50(2): 273

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    Paper Information

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    Received: Nov. 26, 2020

    Accepted: --

    Published Online: Mar. 30, 2021

    The Author Email:

    DOI:

    CSTR:32186.14.

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