Growth of &#945;-Ga<sub>2</sub>O<sub>3</sub> on Different Plane of Sapphire Substrate by Mist-CVD Method

LI Xiongjie; NING Pingfan; CHEN Shiao; QIAO Sibo; CHENG Hongjuan; WANG Yingmin; NIU Pingjuan

doi:10.16553/j.cnki.issn1000-985x.2024.0273

Journal of Synthetic Crystals, Volume. 54, Issue 2, 255(2025)

Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method

LI Xiongjie^1,2, NING Pingfan^2、*, CHEN Shiao², QIAO Sibo², CHENG Hongjuan³, WANG Yingmin³, and NIU Pingjuan²

Author Affiliations

¹School of Mechanical Engineering, Tiangong University, Tianjin 300387, China

²[in Chinese]

²Institute of Quantum Materials and Devices, School of Electronics & Information Engineering, Tiangong University, Tianjin 300387, China

³Key Laboratory of Advanced Semiconductor Crystal Materials Technology, The 46th Research Institute, CETC, Tianjin 300220, China

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LI Xiongjie, NING Pingfan, CHEN Shiao, QIAO Sibo, CHENG Hongjuan, WANG Yingmin, NIU Pingjuan. Growth of α-Ga₂O₃ on Different Plane of Sapphire Substrate by Mist-CVD Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 255

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Paper Information

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Received: Nov. 4, 2024

Accepted: Mar. 31, 2025

Published Online: Mar. 31, 2025

The Author Email: NING Pingfan (ningpingfan@tiangong.edu.cn)

DOI:10.16553/j.cnki.issn1000-985x.2024.0273

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology