Chinese Journal of Lasers, Volume. 29, Issue 7, 643(2002)

Effect of Initialization Conditions on the Reflectivity and CNR of Ge2Sb2Te5 Phase-change Optical Disk

[in Chinese]*, [in Chinese], and [in Chinese]
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    References(5)

    [1] [1] Gan Fuxi. Storage Technology of Digital Optical Disk [M]. Beijing: Science Press, 1998 (in Chinese)

    [2] [2] J. Feinleib, J. deNeufville, S. C. Moss et al.. Rapid reversible light-induced crystallization of amorphous semiconductors [J]. Appl. Phys. Lett., 1971, 18(6):254~257

    [3] [3] Chain-Ming Lee, Tsung-Shune Chin, Yi-Yuan Huang et al.. Optical properties of Ge40Sb10Te50Bx (x=0~2) films [J]. Jpn. J. Appl. Phys., 1999, 38(11):6369~6371

    [4] [4] V. Weidenhof, I. Friedrich, S. Ziegler et al.. Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5 [J]. J. Appl. Phys., 1999, 86(10):5879~5887

    [5] [5] L. P. Shi, T. C. Chong, P. K. Tan et al.. Study of the partial crystallization properties of phase change optical recording disks [J]. Jpn. J. Appl. Phys., 1999, 38(3B):1645~1648

    CLP Journals

    [1] Huang Huan, Wang Yang, Gan Fuxi. Laser Initialization Study of Novel SiSb Phase Change Films[J]. Acta Optica Sinica, 2010, 30(4): 1135

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    [in Chinese], [in Chinese], [in Chinese]. Effect of Initialization Conditions on the Reflectivity and CNR of Ge2Sb2Te5 Phase-change Optical Disk[J]. Chinese Journal of Lasers, 2002, 29(7): 643

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    Paper Information

    Category: holography and information processing

    Received: Apr. 19, 2001

    Accepted: --

    Published Online: Aug. 8, 2006

    The Author Email: (lb73sd@sina.com.cn)

    DOI:

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