Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Photonics Research, Volume. 7, Issue 9, B66(2019)

Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array

Liang Zhang1,2, Yanan Guo1,2,3,4, Jianchang Yan1,2,3,4,6、*, Qingqing Wu1,2, Yi Lu1,2, Zhuohui Wu1,2, Wen Gu1,2, Xuecheng Wei1,2,3,4, Junxi Wang1,2,3,4,5、*, and Jinmin Li1,2,3,4
Author Affiliations
  • 1Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
  • 4State Key Laboratory of Solid-State Lighting, Beijing 100083, China
  • 5e-mail: jxwang@semi.ac.cn
  • 6e-mail: yanjc@semi.ac.cn
    • show less
    Full TextGet PDF
    Figures&Tables (9)
    Equations (7)
    References (36)
    Cited By (28)
    Tools
    Paper Information
    Topics
    References(36)

    [1] D. Li, K. Jiang, X. Sun, C. Guo. AlGaN photonics: recent advances in materials and ultraviolet devices. Adv. Opt. Photon., 10, 43-110(2018).

    [2] J. M. Li, Z. Liu, Z. Q. Liu, J. C. Yan, T. B. Wei, X. Y. Yi, J. X. Wang. Advances and prospects in nitrides based light-emitting-diodes. J. Semicond., 37, 061001(2016).

    [3] T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, H. Hirayama. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency. Appl. Phys. Express, 10, 031002(2017).

    [4] M. Kneissl, T.-Y. Seong, J. Han, H. Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics, 13, 233-244(2019).

    [5] Y. Guo, J. Yan, Y. Zhang, J. Wang, J. Li. Enhancing the light extraction of AlGaN-based ultraviolet light-emitting diodes in the nanoscale. J. Nanophoton., 12, 043510(2018).

    [6] R. Lin, S. V. Galan, H. Sun, Y. Hu, M. S. Alias, B. Janjua, T. K. Ng, B. S. Ooi, X. Li. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations. Photon. Res., 6, 457-462(2018).

    [7] B. S. Ooi, T. K. Ng, M. K. Shakfa, D. Priante, R. C. Subedi, I. Ashry, A. A. Alatawi, E. Stegenburgs, J. A. Holguin-Lerma, M. Tangi, M. S. Alias. Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices. J. Nanophoton., 12, 043508(2018).

    [8] W. Guo, Z. Yang, J. Li, X. Yang, Y. Zhang, J. Wang, K. W. A. Chee, P. Gao, J. Ye. Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array. Nanoscale, 9, 15477-15483(2017).

    [9] W. Chen, X. Wen, J. Yang, M. Latzel, R. Patterson, S. Huang, S. Shrestha, B. Jia, D. J. Moss, S. Christiansen, G. Conibeer. Free charges versus excitons: photoluminescence investigation of InGaN/GaN multiple quantum well nanorods and their planar counterparts. Nanoscale, 10, 5358-5365(2018).

    [10] P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan, J. Li. Optical properties of nanopillar AlGaN/GaN MQWs for ultraviolet light-emitting diodes. Opt. Express, 22, 320-327(2014).

    [11] M. L. Kuo, Y. S. Kim, M. L. Hsieh, S. Y. Lin. Efficient and directed nano-LED emission by a complete elimination of transverse-electric guided modes. Nano Lett., 11, 476-481(2011).

    [12] Z. Mi, S. Zhao, S. Y. Woo, M. Bugnet, M. Djavid, X. Liu, J. Kang, X. Kong, W. Ji, H. Guo, Z. Liu, G. A. Botton. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers. J. Phys. D, 49, 364006(2016).

    [13] H. Sun, M. K. Shakfa, M. M. Muhammed, B. Janjua, K.-H. Li, R. Lin, T. K. Ng, I. S. Roqan, B. S. Ooi, X. Li. Surface-passivated AlGaN nanowires for enhanced luminescence of ultraviolet light emitting diodes. ACS Photon., 5, 964-970(2017).

    [14] B. Janjua, H. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, B. S. Ooi. Droop-free AlxGa1−xN/AlyGa1−yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. Opt. Express, 25, 1381-1390(2017).

    [15] J. Kim, U. Choi, J. Pyeon, B. So, O. Nam. Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method. Sci. Rep., 8, 935(2018).

    [16] P. M. Coulon, G. Kusch, R. W. Martin, P. A. Shields. Deep-UV emission from highly-ordered AlGaN/AlN core-shell nanorods. ACS Appl. Mater. Interfaces, 10, 33441-33449(2018).

    [17] Z. Zhuang, X. Guo, B. Liu, F. Hu, J. Dai, Y. Zhang, Y. Li, T. Tao, T. Zhi, Z. Xie, H. Ge, X. Wang, M. Xiao, T. Wang, Y. Shi, Y. Zheng, R. Zhang. Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. Nanotechnology, 27, 015301(2016).

    [18] J. Mickevičius, Ž. Podlipskas, R. Aleksiejūnas, A. Kadys, J. Jurkevičius, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, R. Gaska. Nonradiative recombination, carrier localization, and emission efficiency of AlGaN epilayers with different Al content. J. Electron. Mater., 44, 4706-4709(2015).

    [19] L. Zhang, J. Yan, Q. Wu, Y. Guo, T. Wei, Z. Liu, G. Yuan, X. Wei, Y. Zhang, J. Li, J. Wang. Deep ultraviolet light-emitting diodes with improved performance on nanoporous template. Opt. Express, 27, 4917-4926(2019).

    [20] B. K. Ridley. Kinetics of radiative recombination in quantum wells. Phys. Rev. B, 41, 12190-12196(1990).

    [21] Y.-J. Lee, C.-H. Chiu, C. C. Ke, P. C. Lin, T.-C. Lu, H.-C. Kuo, S.-C. Wang. Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate. IEEE J. Sel. Top. Quantum Electron., 15, 1137-1143(2009).

    [22] T. Oto, R. G. Banal, M. Funato, Y. Kawakami. Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells. Phys. Status Solidi C, 7, 1909-1912(2010).

    [23] D. Y. Fu, R. Zhang, B. G. Wang, Z. Zhang, B. Liu, Z. L. Xie, X. Q. Xiu, H. Lu, Y. D. Zheng, G. Edwards. Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films. Appl. Phys. Lett., 94, 191907(2009).

    [24] Z. Zhuang, X. Guo, G. Zhang, B. Liu, R. Zhang, T. Zhi, T. Tao, H. Ge, F. Ren, Z. Xie, Y. Zheng. Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography. Nanotechnology, 24, 405303(2013).

    [25] Y. S. Park, G. Lee, M. J. Holmes, C. C. Chan, B. P. Reid, J. A. Alexander-Webber, R. J. Nicholas, R. A. Taylor, K. S. Kim, S. W. Han, W. Yang, Y. Jo, J. Kim, H. Im. Surface-effect-induced optical bandgap shrinkage in GaN nanotubes. Nano Lett., 15, 4472-4476(2015).

    [26] C. He, Z. Qin, F. Xu, M. Hou, S. Zhang, L. Zhang, X. Wang, W. Ge, B. Shen. Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers. Sci. Rep., 5, 13046(2015).

    [27] Y. Iwata, R. G. Banal, S. Ichikawa, M. Funato, Y. Kawakami. Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy. J. Appl. Phys., 117, 075701(2015).

    [28] J.-C. Blancon, H. Tsai, W. Nie, C. C. Stoumpos, L. Pedesseau, C. Katan, M. Kepenekian, C. M. M. Soe, K. Appavoo, M. Y. Sfeir, S. Tretiak, P. M. Ajayan, M. G. Kanatzidis, J. Even, J. J. Crochet, A. D. Mohite. Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites. Science, 355, 1288-1292(2017).

    [29] W. Y. Liang. Excitons. Phys. Educ., 5, 226-228(1970).

    [30] S. Zhao, M. Djavid, Z. Mi. Surface emitting, high efficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon. Nano Lett., 15, 7006-7009(2015).

    [31] K. H. Lee, H. J. Park, S. H. Kim, M. Asadirad, Y. T. Moon, J. S. Kwak, J. H. Ryou. Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes. Opt. Express, 23, 20340-20349(2015).

    [32] A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, J. Li. Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode. Appl. Phys. Lett., 105, 251103(2014).

    [33] H.-Y. Ryu. Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures. Ryu Nanoscale Res. Lett., 9, 7(2014).

    [34] Z. Liu, K. Wang, X. Luo, S. Liu. Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing. Opt. Express, 18, 9398-9412(2010).

    [35] H.-Y. Ryu, I.-G. Choi, H.-S. Choi, J.-I. Shim. Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl. Phys. Express, 6, 062101(2013).

    [36] Y. Guo, Y. Zhang, J. Yan, X. Chen, S. Zhang, J. Wang, J. Li. Enhancement of light extraction on AlGaN-based deep-ultraviolet light-emitting diodes using a sidewall reflection method. 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (Sslchina: Ifws), 127-130(2016).

    CLP Journals

    [1] Xiaohang Li, Russell D. Dupuis, Tim Wernicke, "Semiconductor UV photonics: feature introduction," Photonics Res. 7, SUVP1 (2019)

    Tools

    Get Citation

    Copy Citation Text

    Liang Zhang, Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang, Jinmin Li, "Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array," Photonics Res. 7, B66 (2019)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Special Issue: SEMICONDUCTOR UV PHOTONICS

    Received: Jan. 28, 2019

    Accepted: Jul. 6, 2019

    Published Online: Aug. 14, 2019

    The Author Email: Jianchang Yan (yanjc@semi.ac.cn), Junxi Wang (jxwang@semi.ac.cn)

    DOI:10.1364/PRJ.7.000B66

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology