Chinese Optics Letters, Volume. 22, Issue 1, 013202(2024)

Efficient terahertz generation from van der Waals α-In2Se3

Shijie Duan1,2, Ming Yang1,2, Suyuan Zhou1,3, Longhui Zhang1,4, Jinsen Han1,2, Xu Sun1,2, Guang Wang1,2, Changqin Liu1,2, Dongdong Kang1,2, Xiaowei Wang1,2, Jiahao Chen1,2、*, and Jiayu Dai1,2、**
Author Affiliations
  • 1Department of Physics, College of Science, National University of Defense Technology, Changsha 410073, China
  • 2Hunan Key Laboratory of Extreme Matter and Applications (XMAL), Changsha 410073, China
  • 3Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China
  • 4Guangxi Key Laboratory of Automatic Detecting Technology and Instrument, Guilin University of Electronic Technology, Guilin 541004, China
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    Figures & Tables(4)
    Synthesis and structure characterization of α-In2Se3 nanoflakes. (a) Side view of the crystal structure of α-In2Se3 in R3m space group. The quintuple layers (QLs) are stacked with weak vdW interactions. (b) Raman spectrum of α-In2Se3. Labeled peaks represent A(LO + TO) and A(LO) modes, respectively. (c) AFM image of the α-In2Se3 nanoflakes with the thickness of 1.28 nm.
    THz generation from thin film and bulk α-In2Se3. (a) indicates the detection geometry pumped by 800 nm pulse. The incident pulse polarization angle θ and sample azimuthal angle ϕ within the ab plane are two degrees of freedom in studying the emitted THz properties. (b) Characterization of THz pulses from 40 nm thin film (blue) and bulk (gray) as a reference. (c) Polarization dependency of the THz pulse peak intensity and fitting by Eq. (1). (d) Azimuthal angle dependence of the THz amplitude with two types of fittings according to Eq. (2).
    Carrier dynamics investigated by reflective optical pump-probe method. (a) Schematic diagram of the measuring geometry. The UV pump beam (400 nm) and the IR probe beam (800 nm) are focused and overlapped on the sample surface with a spot size of 141 and 114 µm, respectively. The reflected signal is monitored by a silicon-balanced photodetector. (b), (c) Time-resolved reflectivity change ΔR/R of bulk and thin film α-In2Se3 as a function of pump-probe time delay at different pump fluence; (d)–(f) signal of reflectivity from thin films with decreased thickness of 10, 5.5, and 4.5 nm.
    Parameters of carrier dynamics retrieved from reflectivity decaying data. Left (a), (c), (e) are obtained from reference bulk sample. Right (b), (d), (f) are derived from thin-film sample. Normalized reflectivity data from (a) bulk and (b) 40 nm thin film. Dashed curves in (c) and (d) describe the amplitudes of fast (blue) and slow (red) decay varying along with pump fluence intensity. The relative amplitudes are shown in the insets. Dashed curves in (e) and (f) represent time constant change from fast (blue) and slow (red) decay at series of pump fluence.
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    Shijie Duan, Ming Yang, Suyuan Zhou, Longhui Zhang, Jinsen Han, Xu Sun, Guang Wang, Changqin Liu, Dongdong Kang, Xiaowei Wang, Jiahao Chen, Jiayu Dai, "Efficient terahertz generation from van der Waals α-In2Se3," Chin. Opt. Lett. 22, 013202 (2024)

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    Paper Information

    Category: Ultrafast Optics and Attosecond/High-field Physics

    Received: Aug. 9, 2023

    Accepted: Sep. 6, 2023

    Published Online: Jan. 19, 2024

    The Author Email: Jiahao Chen (chenjiahao@nudt.edu.cn), Jiayu Dai (jydai@nudt.edu.cn)

    DOI:10.3788/COL202422.013202

    CSTR:32184.14.COL202422.013202

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