Laser & Optoelectronics Progress, Volume. 61, Issue 21, 2100004(2024)
Reliability of Semiconductor Lasers for Space Applications
Fig. 1. Thermal cycle test results[8]. (a) Output power of continuous wave pump diode after 8 cycles at 2 ℃/min and 50 cycles at 5 ℃/min; (b) microchip laser average output power for same number of cycles at two different temperature settings
Fig. 2. Comparison of packaging for different lasers[9]. (a) Bonding packaging lasers; (b) welding packaging lasers; (c) example of power instabilities encountered after thermal cycles on adhesive assembled lasers and appeared competitive peaks after adhesive-based devices thermal cycles
Fig. 3. Stress and strain distribution of materials at different interconnect interfaces after thermal shock[11]
Fig. 4. Stress and strain of the"most dangerous element"of the three interconnect interfaces evolve with time[11]. (a) Stress; (b) strain
Fig. 5. Variation of maximum electro-optical conversion efficiency of two structures with temperature[12]
Fig. 6. FOB response caused by the introduction of single-mode fiber and the application of 5 Hz vibration by electromagnetic exciter in FOB [inset: enlarged view of the signals when the shaker was on (left) and off (right)][19]
Fig. 7. Change in laser power and photodiode current under different dose rates of irradiation[27]. (a) Laser power; (b) photodiode current
Fig. 8. Narrow linewidth ECSL based on permanent refractive index modulated Bragg grating feedback[28]. (a) Schematic of the ECSL device for radiation resistance; (b) simple model of the laser structure; (c) photograph of the laser
Fig. 9. Schematic diagram of space radiation effect performance damage process[30]
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Huaqing Sun, Lei Cheng, Xuanjun Dai. Reliability of Semiconductor Lasers for Space Applications[J]. Laser & Optoelectronics Progress, 2024, 61(21): 2100004
Category: Reviews
Received: Dec. 28, 2023
Accepted: Feb. 5, 2024
Published Online: Nov. 18, 2024
The Author Email: Lei Cheng (chenglei@jcgjd.org.cn)
CSTR:32186.14.LOP232785