Fig. 1. Cross-sectional view of (a) conventional LIGBT structure, (b) NTLIGBT structure.

Fig. 2. (Color online) I–V curves of LIGBT under ESD stress.

Fig. 3. (Color online) Comparison of voltage and time under ESD stress.

Fig. 4. The relationship between the time and the temperature with different ESD currents.

Fig. 5. (Color online) Current distribution after the novel NTLIGBT is fully turned on.

Fig. 6. (Color online) I–V curve of LIGBT structure with different P⁺ locations.

Fig. 7. (Color online) The variation of the and the with different gate lengths.

Fig. 8. (Color online) The variation of the and the with different concentration of the N-buffer layer.