PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN<sub><i>x</i></sub> stressor

Yiding Lin; Danhao Ma; Kwang Hong Lee; Rui-Tao Wen; Govindo Syaranamual; Lionel C. Kimerling; Chuan Seng Tan; Jurgen Michel

doi:10.1364/PRJ.419776

Photonics Research, Volume. 9, Issue 7, 1255(2021)

PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN_x stressor

Yiding Lin^1,2,5, Danhao Ma³, Kwang Hong Lee², Rui-Tao Wen^4,6, Govindo Syaranamual², Lionel C. Kimerling³, Chuan Seng Tan^1,2、*, and Jurgen Michel^2,3,4,7

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

⁴Materials Research Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

⁵Current address: Max Planck Institute of Microstructure Physics, Halle (Saale) 06120, Germany

⁶Current address: Southern University of Science and Technology, Shenzhen 518055, China

⁷e-mail: jmichel@mit.edu

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Yiding Lin, Danhao Ma, Kwang Hong Lee, Rui-Tao Wen, Govindo Syaranamual, Lionel C. Kimerling, Chuan Seng Tan, Jurgen Michel, "PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiN_x stressor," Photonics Res. 9, 1255 (2021)

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Paper Information

Category: Silicon Photonics

Received: Jan. 15, 2021

Accepted: Apr. 26, 2021

Published Online: Jun. 21, 2021

The Author Email: Chuan Seng Tan (tancs@ntu.edu.sg)

DOI:10.1364/PRJ.419776

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