Journal of Semiconductors, Volume. 42, Issue 8, 082301(2021)

Ultra-low Vpp and high-modulation-depth InP-based electro–optic microring modulator

Dapeng Liu1,2, Jian Tang1,2, Yao Meng1,2, Wei Li1,2, Ninghua Zhu1,2, and Ming Li1,2
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Science, Beijing 100049, China
  • show less
    Figures & Tables(7)
    (Color online) Architecture of the microring modulator.
    (Color online) (a) A photograph of the microring modulator with a scale bar of 200 μm. (b) A photograph of the chip coupled to the fiber array and probes for experimental test.
    The I–V curve of the active resonator when the 50 Ω resistance is disconnected.
    (Color online) (a) The transmission spectra of the microring modulator under four injection currents applied to the SOA. (b) Modulation depth and insertion loss with currents from 136.74 to 138.24 mA.
    (Color online) The experiment schematic of the modulation bandwidth measurement.
    The bandwidth of the device when it works as an electro–optic modulator.
    (Color online) Measured eye diagrams of the device under 4, 8, and 12 Gb/s bit rates.
    Tools

    Get Citation

    Copy Citation Text

    Dapeng Liu, Jian Tang, Yao Meng, Wei Li, Ninghua Zhu, Ming Li. Ultra-low Vpp and high-modulation-depth InP-based electro–optic microring modulator[J]. Journal of Semiconductors, 2021, 42(8): 082301

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Articles

    Received: Jan. 25, 2021

    Accepted: --

    Published Online: Aug. 6, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/8/082301

    Topics