Researching | Band Filling Law of InGaAs Well-Cluster Composite Nanostructures

Acta Optica Sinica, Volume. 44, Issue 13, 1316002(2024)

Band Filling Law of InGaAs Well-Cluster Composite Nanostructures

Ru Wang, Xing Ge, Hongyu Sheng, Shuting Yang, Xinyu Wang, Shihang Xu, Huiming Zeng, and Qingnan Yu^*

Author Affiliations

School of Electronic and Information Engineering, Wuxi University, Wuxi 214105, Jiangsu, China

show less

Abstract Get PDF(in Chinese)

Figures&Tables (5)

References (23)

Paper Information

References(23)

[1] Yuan W Y, Fu M, Li Z X et al. 2 kW bidirectional fiber cladding power stripper[J]. Laser & Optoelectronics Progress, 60, 1714003(2023).

[2] Yan W N, Wang Q H, Zhou H J et al. Oxide-confined 940 nm vertical cavity surface emitting lasers[J]. Laser & Optoelectronics Progress, 60, 1514003(2023).

[3] Yuan Y, Chai X L, Yang C A et al. 2.75-μm mid-infrared GaSb-based quantum well lasers with quinary alloy barrier[J]. Chinese Journal of Lasers, 47, 0701026(2020).

[4] Shi M Y, Wu Y, Li J et al. Research progress of high-power narrow-linewidth lasers based on spectral broadening[J]. Laser & Optoelectronics Progress, 60, 1500001(2023).

[5] Zhao Z Z, Xun M, Pan G Z et al. Design and fabrication of 905 nm vertical cavity surface emitting laser with high power conversion efficiency[J]. Acta Physica Sinica, 70, 114202(2021).

[6] Ma B J, Wang J, Liu H et al. Improved performances of lasers on silicon (001) with symmetrical cathode structures[J]. Chinese Journal of Lasers, 50, 1101019(2023).

[7] Mao L, Zhang X J, Li C L et al. 45 nm broadband continuously tunable semiconductor disk laser[J]. Acta Physica Sinica, 70, 224206(2021).

[8] Wu J, Wang Y H, Tai H X et al. Low-dimensional indium-based well-dot composite quantum structures and their optical properties and application prospects[J]. Chinese Journal of Lasers, 49, 1901002(2022).

[9] Li X, Tai H X, Wang Y L et al. Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure[J]. Journal of Infrared and Millimeter Waves, 41, 540-544(2022).

[10] Huo D Y, Shi Z W, Zhang W et al. Barrier growth temperature of InGaAs/AlGaAs-quantum well infrared photodetector[J]. Acta Physica Sinica, 66, 068501(2017).

[11] Zhang F, Li L, Ma X H et al. Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers[J]. Acta Physica Sinica, 61, 054209(2012).

[12] Yuan Q H, Jing H Q, Zhong L et al. High-power and high-reliability 9XX-nm laser diode[J]. Chinese Journal of Lasers, 47, 0401006(2020).

[13] Wang Q H, Wang H Z, Wang J et al. Localized states of high-strain InGaAs/GaAs multiple quantum wells[J]. Chinese Journal of Luminescence, 44, 627-633(2023).

[14] Kong Y T, Ma R, Shen B et al. Experimental detection on thickness fluctuation of InxGa1-xAs-based indium-rich cluster structure[J]. IEEE Photonics Journal, 14, 5858004(2022).

[15] de Walle C G V. Band lineups and deformation potentials in the model-solid theory[J]. Physical Review B, 39, 1871-1883(1989).

[16] Cui X L. Flat band potential of semiconductor electrodes[J]. Chemistry, 80, 1160-1170, 1175(2017).

[17] Wong J, Omelchenko S T, Atwater H A. Impact of semiconductor band tails and band filling on photovoltaic efficiency limits[J]. ACS Energy Letters, 6, 52-57(2021).

[18] Zheng M, Yu Q N, Tai H X et al. Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure[J]. Chinese Optics Letters, 18, 051403(2020).

[19] Wang Y H, Tai H X, Duan R Net?al. Super-gain nanostructure with self-assembled well-wire complex energy-band engineering for high performance of tunable laser diodes[J]. Nanophotonics, 12, 1763-1776(2023).

[20] Wu L Z. Accurate determination of quasi-Fermi-level separation of semiconductor lasers[J]. Applied Physics Letters, 76, 964-966(2000).

[21] Faisst J, List M, Heinz F et al. Direct determination of the steady state and time-resolved quasi-fermi level separation in organic solar cells from electroluminescence measurements[J]. Advanced Optical Materials, 10, 2200909(2022).

[22] Zhang J Y, Zhang J W, Zeng Y G et al. Design of gain region of high-power vertical external cavity surface emitting semiconductor laser and its fabrication[J]. Acta Physica Sinica, 69, 054204(2020).

[23] Sugawara M, Okazaki N, Fujii T et al. Diamagnetic shift and oscillator strength of two-dimensional excitons under a magnetic field in In0.53Ga0.47As/InP quantum wells[J]. Physical Review B, 48, 8848-8856(1993).

Tools

Get Citation

Copy Citation Text

Ru Wang, Xing Ge, Hongyu Sheng, Shuting Yang, Xinyu Wang, Shihang Xu, Huiming Zeng, Qingnan Yu. Band Filling Law of InGaAs Well-Cluster Composite Nanostructures[J]. Acta Optica Sinica, 2024, 44(13): 1316002

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Materials

Received: Jan. 11, 2024

Accepted: Mar. 21, 2024

Published Online: Jul. 4, 2024

The Author Email: Yu Qingnan (qnyu@cwxu.edu.cn)

DOI:10.3788/AOS240481

CSTR:32393.14.AOS240481

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology