Acta Optica Sinica, Volume. 41, Issue 9, 0913001(2021)
Silicon-Based All-Optical Fredkin Gate Using Cross-Phase Modulation Effect
Fig. 1. Silicon-based all-optical Fredkin gate based on XPM effect. (a) Structural schematic; (b) schematic of section of phase shift arm; (c) mode field distribution of TE mode
Fig. 3. Influence of waveguide structural parameters on performance of silicon-based all-optical Fredkin gate. (a) Waveguide linear absorption coefficient; (b) worst extinction ratio; (c) pump light power
Fig. 4. Influence of beam splitting ratio on worst extinction ratio of silicon-based all-optical Fredkin gate. (a) Sr1; (b) Sr2; (c) Sr3; (d) Sr4
Fig. 5. Spectrum of silicon-based all-optical Fredkin gates in different logic states. (a) Output signal is 000; (b) output signal is 001; (c) output signal is 010; (d) output signal is 011; (e) output signal is 100; (f) output signal is 110; (g) output signal is 101; (h) output signal is 111
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Ruolan Yu, Jun Li, Weiwei Chen, Pengjun Wang. Silicon-Based All-Optical Fredkin Gate Using Cross-Phase Modulation Effect[J]. Acta Optica Sinica, 2021, 41(9): 0913001
Category: Integrated Optics
Received: Oct. 12, 2020
Accepted: Dec. 1, 2020
Published Online: May. 10, 2021
The Author Email: Chen Weiwei (chenweiwei@nbu.edu.cn), Wang Pengjun (wangpengjun@wzu.edu.cn)