Fig. 1. Structural diagrams of SCAM APD. (a) I²E InP APD; (b) conventinal InP APD

Fig. 2. Simulated curves of current-voltage and gain

Fig. 3. Ionization coefficient distributions of electrons and holes in different devices. (a) (c) (d) I²E InP APD; (b)(e)(f) conventional InP APD

Fig. 4. Excess noise factor versus gain under different k values

Fig. 5. Simulated energy band diagrams of different devices. (a) I²E InP APD; (b) conventinal InP APD

Fig. 6. Simulated impact ionization generation rates of different devices. (a) I²E InP APD; (b) conventinal InP APD