Fig. 1. Structural diagram of cross section of SiC nip APD

Fig. 2. Current-voltage and gain curves of SiC nip APD

Fig. 3. Avalanche characteristics of SiC nip APD under 220-320 nm incident ultraviolet light . (a) Gain curves; (b) breakdown voltage

Fig. 4. Characterization of SiC APD detection capability. (a) Passive quenching circuit; (b) one typical avalanche voltage pulse signal

Fig. 5. Dark count rate versus single photon detection efficiency for SiC nip APD under 240 nm and 280 nm incident UV light

Fig. 6. Optical response curve of SiC nip APD

Fig. 7. Avalanche voltage pulse height distributions of SiC nip APD under 240 nm and 280 nm incident UV light