Chinese Optics Letters, Volume. 4, Issue 1, 0127(2006)

High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

Kai Zheng*, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, and Xiaoyu Ma
Author Affiliations
  • National Engineering Research Center for Opto-Electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
  • show less
    References(17)

    [1] [1] N. Lichtenstein, R. Winterhoff, F. Scholz, H. Schweizer, S. Weiss, M. Hutter, and H. Reichl, IEEE J. Sel. Top. Quantum Electron. 6, 564 (2000).

    [2] [2] K. Masumoto, I. Yamada, H. Tanaka, Y. Fujise, and K. Hashimoto, Lasers in Medical Science 18, 134 (2003).

    [3] [3] M. Sagawa, K. Hiramoto, T. Toyonaka, T. Kikawa, S. Fujisaki, and K. Uomi, Electron. Lett. 32, 2277 (1996).

    [4] [4] F. G. Gfeller, P. Buchmann, P. W. Epperiein, H. P. Meier, and J. P. Reithmaier, J. Appl. Phys. 72, 2131 (1992).

    [5] [5] T. Shibutani, M. Kume, K. Hamada, H. Shimizu, K. Itoh, G. Kano, and I. Teramoto, IEEE J. Quantum Electron. 23, 760 (1987).

    [6] [6] H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Matsukawa, K. Yodoshi, and T. Yamaguchi, Electron. Lett. 27, 661 (1991).

    [7] [7] S. Kamiyama, Y. Mori, Y. Takahashi, and K. Ohnaka, Appl. Phys. Lett. 58, 2595 (1991).

    [8] [8] H. Naito, M. Kume, K. Hamada, H. Shimizu, and G. Kano, IEEE J. Quantum Electron. 25, 1495 (1989).

    [9] [9] J. E. Ungar, N. S. K. Kwong, S. W. Oh, J. S. Chen, and N. B. Chaim, Electron. Lett. 30, 1766 (1994).

    [10] [10] A. Shima, H. Tada, K. Ono, M. Fujiwara, T. Utakouji, T. Kimura, M. Takemi, and H. Higuchi, IEEE Photon. Technol. Lett. 9, 413 (1997).

    [11] [11] Y. Ueno, K. Endo, H. Fujii, K. Kobayashi, K. Hara, and T. Yuasa, Electron. Lett. 26, 1726 (1990).

    [12] [12] K. Itaya, M. Ishikawa, G. Hatakoshi, and Y. Uematsu, IEEE J. Quantum Electron. 27, 1496 (1991).

    [13] [13] H. C. Ko, M. W. Cho, J. H. Chang, and M. Yang, Appl. Phys. A 68, 467 (1999).

    [14] [14] H. Hamada, M. Shono, S. Honda, R. Hiroyama, K. Yodoshi, and T. Yamaguchi, IEEE J. Quantum Electron. 27, 1483 (1991).

    [15] [15] W. D. Laidig, N. Holonyak, M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett. 38, 776 (1981).

    [17] [17] I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).

    CLP Journals

    [1] Zhu Zhen, Zhang Xin, Xiao Chengfeng, Li Peixu, Sun Sujuan, Xia Wei, Xu Xiangang. Fabrication of Highly Reliable Watt-Level 660 nm Semiconductor Lasers[J]. Chinese Journal of Lasers, 2018, 45(5): 501002

    [2] Lin Tao, Duan Yupeng, Zheng Kai, Chong Feng, Ma Xiaoyu. High Power 657 nm Laser Diodes with Nonabsorbing Windows[J]. Chinese Journal of Lasers, 2009, 36(1): 104

    [3] Lin Tao, Zheng Kai, Ma Xiaoyu. AlGaInP/GaInP Quantum Well Intermixing Induced by Zinc Impurity Diffusion[J]. Acta Optica Sinica, 2008, 28(11): 2209

    [4] Wang Jun, Bai Yiming, Chong Feng, Liu Yuanyuan, Feng Xiaoming, Wang Yonggang, Zhang Guangze, Liu Suping, Ma Xiaoyu. High Power Laser Diode Array with 60% Electro-Optical Efficiency[J]. Chinese Journal of Lasers, 2008, 35(9): 1323

    [5] Chunling Liu, Yanping Yao, Chunwu Wang, Xin Gao, Zhongliang Qiao, Mei Li, Yuxia Wang, Baoxue Bo, "Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface," Chin. Opt. Lett. 6, 03183 (2008)

    Tools

    Get Citation

    Copy Citation Text

    Kai Zheng, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, Xiaoyu Ma, "High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing," Chin. Opt. Lett. 4, 0127 (2006)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Aug. 10, 2005

    Accepted: --

    Published Online: Jun. 6, 2006

    The Author Email: Kai Zheng (zhengkai@semi.ac.cn)

    DOI:

    Topics