Fig. 1. Theoretical model of dual-wavelength electro-optic modulator and mode division multiplexing integrated device

Fig. 2. Theoretical model of side coupling structure

Fig. 3. Theoretical model of silicon-based mode division multiplexing

Fig. 4. Three-dimensional structure of integrated device of photonic crystal dual-wavelength electro-optic modulation and mode division multiplexing

Fig. 5. (a) Structure diagram of electro-optic modulation module; (b) Variation of the resonance wavelength and transmittance of the L3 resonator with the radius R of the yellow air hole; (c) Variation of the resonance wavelength and transmittance of the L3 resonator with the moving distance Δd of the upper and lower air holes

Fig. 6. Schematic diagram of electro-optic modulator doping structure

Fig. 7. Carrier concentration distribution diagram when the voltage across both ends is 1.05 V. (a) P-type carrier concentration; (b) N-type carrier concentration

Fig. 8. Transmittance diagram of output port 2 when voltage is applied to different resonators.(a) Voltage is applied to both resonators A and B; (b) Only the voltage is applied to the B resonator; (c) Only the voltage is applied to the A resonator

Fig. 9. (a) Effective refractive index map of nanowire waveguide; (b) Structure diagram of mode-division-multiplexing module; (c) Relationship between different coupling lengths and coupling efficiency

Fig. 10. (a) Schematic diagram of the modulation module structure after cascading; (b) Schematic diagram of cone structure; (c) Input the transmission spectrum before and after optimization of the waveguide

Fig. 10. [in Chinese]

Fig. 11. Overall integrated device structure diagram

Fig. 12. [in Chinese]

Fig. 12. On-off steady-state field distribution diagrams of different wavelengths and modes. (a) 1552.1 nm TE₀ "on" state; (b) 1552.1 nm TE₀ "off" state; (c) 1552.1 nm TE₁ "on" state; (d) 1552.1 nm TE₁ "off" state; (e) 1556.1 nm TE₀ "on" state; (f) 1556.1 nm TE₀ "off" state; (g) 1556.1 nm TE₁ "on" state; (h) 1556.1 nm TE₁ "off" state

Fig. 13. Stable time when the integrated device is in the "on" and "off" states. (a) "on" state; (b) "off" state