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Acta Physica Sinica, Volume. 69, Issue 5, 057301-1(2020)

Magnetotransport properties and stress control of HgCdTe thin film

Song-Ran Zhang1, Dai-Hua He1, Hua-Yao Tu2, yan Sun2, Ting-Ting Kang2, Ning Dai2, Jun-Hao Chu2, and Guo-Lin Yu2、*
Author Affiliations
  • 1School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    Schematic diagram of the sample, and the arrows indicate the direction of strain when positive voltage is applied.

    Fig. 1. Schematic diagram of the sample, and the arrows indicate the direction of strain when positive voltage is applied.

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    DCXRD of the sample.

    Fig. 2. DCXRD of the sample.

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    (a) The longitudinal resistance of HgCdTe as function of magnetic field at 1.5 K; (b) remove the background resistance from SdH oscillations.

    Fig. 3. (a) The longitudinal resistance of HgCdTe as function of magnetic field at 1.5 K; (b) remove the background resistance from SdH oscillations.

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    Relationship between the filling factor ν and the reciprocal 1/B of the magnetic field and the fitting line.

    Fig. 4. Relationship between the filling factor ν and the reciprocal 1/B of the magnetic field and the fitting line.

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    Voltage dependence of resistance under different magnetic field at 1.5 K.

    Fig. 5. Voltage dependence of resistance under different magnetic field at 1.5 K.

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    Song-Ran Zhang, Dai-Hua He, Hua-Yao Tu, yan Sun, Ting-Ting Kang, Ning Dai, Jun-Hao Chu, Guo-Lin Yu. Magnetotransport properties and stress control of HgCdTe thin film[J]. Acta Physica Sinica, 2020, 69(5): 057301-1

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    Paper Information

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    Received: Sep. 2, 2019

    Accepted: --

    Published Online: Nov. 18, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191330

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