Journal of Infrared and Millimeter Waves, Volume. 43, Issue 1, 7(2024)
Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors
Fig. 1. The distributions of doping concentration and barrier width of each quantum wells for the NUQWIP
Fig. 2. The measured high resolution transmission electron microscope(HRTEM)of sample A.
Fig. 5. The dependence of dark current on bias voltage at different temperatures,the solid line is NUQWIP,and the dotted line is a conventional QWIP
Fig. 6. Photocurrent response spectra of NUQWIP and Conventional QWIP at 50K.
Fig. 7. Relationship between blackbody responsiveness and bias voltage in Non-uniform QWIP and Conventional QWIP at different temperatures.
Fig. 9. The dependence of dark current on bias voltage of sample A,sample B and sample C at different temperatures.
Fig. 10. Relationship between blackbody responsiveness and bias voltage for samples A,B,and C at different temperatures.
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Jia-Ping SU, Xiao-Hao ZHOU, Zhou TANG, Liu-Yan FAN, Shun-Ji XIA, Ping-Ping CHEN, Ze-Zhong CHEN. Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 7
Category: Research Articles
Received: Apr. 19, 2023
Accepted: --
Published Online: Dec. 26, 2023
The Author Email: Ping-Ping CHEN (ppchen@mail.sitp.ac.cn), Ze-Zhong CHEN (zzhchen@usst.edu.cn)