Journal of Infrared and Millimeter Waves, Volume. 43, Issue 1, 7(2024)

Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors

Jia-Ping SU1,2, Xiao-Hao ZHOU2, Zhou TANG2, Liu-Yan FAN2, Shun-Ji XIA2, Ping-Ping CHEN2、**, and Ze-Zhong CHEN1、*
Author Affiliations
  • 1School of Materials and Chemistry,University of Shanghai for Science and Technology,shanghai 200093,China
  • 2State Key Laboratories of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences Shanghai200083,China
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    Figures & Tables(12)
    The distributions of doping concentration and barrier width of each quantum wells for the NUQWIP
    The measured high resolution transmission electron microscope(HRTEM)of sample A.
    Energy Spectrometer image of sample A.
    The test results of SIMS for sample A
    The dependence of dark current on bias voltage at different temperatures,the solid line is NUQWIP,and the dotted line is a conventional QWIP
    Photocurrent response spectra of NUQWIP and Conventional QWIP at 50K.
    Relationship between blackbody responsiveness and bias voltage in Non-uniform QWIP and Conventional QWIP at different temperatures.
    Photocurrent response spectra of samples A,B,and C at 50K
    The dependence of dark current on bias voltage of sample A,sample B and sample C at different temperatures.
    Relationship between blackbody responsiveness and bias voltage for samples A,B,and C at different temperatures.
    • Table 1. Molecular beam epitaxy growth parameters of samples with different structures

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      Table 1. Molecular beam epitaxy growth parameters of samples with different structures

      Sample NO.Sample typeWell width(X)Barrier width(nm)Well doping concentration(cm-3period
      ANUQWIP6.1 nm75→151×1017→1×101820
      BNUQWIP6.3 nm75→151×1017→1×101820
      CNUQWIP6.5 nm75→151×1017→1×101820
      DQWIP6.5 nm455×101720
    • Table 2. Molecular Beam Epitaxy structure of Non-uniform Quantum Well materials

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      Table 2. Molecular Beam Epitaxy structure of Non-uniform Quantum Well materials

      LayerMaterial

      Thickness

      (nm)

      Description

      Doping

      concentration(cm-3

      7GaAs:Si1 100Top contact layer1×1018
      6Al0.18Ga0.82As15Barrier
      GaAs1.6
      5GaAs:SiXQuantum well20 periods1×1017→1×1018
      GaAs1.6
      4Al0.18Ga0.82As75→15Barrier
      3GaAs:Si1 200Bottom contact layer1×1018
      2Al0.5Ga0.5As300Etch stop layer
      1GaAs300buffer layer
      3inch GaAs(100)substrate
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    Jia-Ping SU, Xiao-Hao ZHOU, Zhou TANG, Liu-Yan FAN, Shun-Ji XIA, Ping-Ping CHEN, Ze-Zhong CHEN. Study on material characterization and device performance of non-uniform GaAs/AlGaAs quantum well infrared detectors[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 7

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    Paper Information

    Category: Research Articles

    Received: Apr. 19, 2023

    Accepted: --

    Published Online: Dec. 26, 2023

    The Author Email: Ping-Ping CHEN (ppchen@mail.sitp.ac.cn), Ze-Zhong CHEN (zzhchen@usst.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2024.01.002

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