Journal of Infrared and Millimeter Waves, Volume. 42, Issue 3, 339(2023)

High power added efficiency AlGaN/GaN MIS-HEMTs for wide band application

Xiao-Juan CHEN1,2、*, Shen ZHANG2, Yi-Chuan ZHANG2, Yan-Kui LI2, Run-Hua GAO2, Xin-Yu LIU2, and Ke WEI2、**
Author Affiliations
  • 1Xidian University, Xi'an 710071, China
  • 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    Figures & Tables(8)
    Diagram of the AlGaN/GaN MIS-HEMT (a)SEM of 4×50µm device,(b)the schematic of epitaxial structure,(c)TEM of 0.25-µm T-gate
    f-dependent C-V characteristics of AlGaN/GaN MIS-HEMTs with fm varying from 1 KHz to 200 KHz,inserting Dit-ET mapping in AlGaN/GaN MIS-HEMTs
    Measured dc characteristics of AlGaN/GaN MIS-HEMTs (a) ID versus VDS with VGS varied from -6 V to 2 V, (b) ID and extrinsic transconductance of MIS-HEMTs with VGS varied from -6 V to 2 V at VDS= 6 V, (c) gate leakage with VGS swept to -30 V, (d) off-state breakdown characteristics at VGS=4 V
    Small-signal characteristics of the fabricated AlGaN/GaN MIS-HEMTs at VDS = 10 V/30 V,inserting fT and fmax with different VDS
    Pulsed I-V characteristics of output characteristics measured at VGS = 2 V with different static stress
    Large-signal measurements at 5 GHz in CW mode (a) VDS=10 V, AlGaN/GaN MIS-HEMTs measurement, (b) VDS=30 V, AlGaN/GaN HEMTs measurement, (c) with different VDS AlGaN/GaN MIS-HEMTs large-signal performance diagram
    Graph of IGS and Gain versus Pin
    Large-signal measurements at 5 GHz/10 GHz/30 GHz (a)PAE characteristic,(b)Gain characteristic,(c)Pout characteristic
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    Xiao-Juan CHEN, Shen ZHANG, Yi-Chuan ZHANG, Yan-Kui LI, Run-Hua GAO, Xin-Yu LIU, Ke WEI. High power added efficiency AlGaN/GaN MIS-HEMTs for wide band application[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 339

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    Paper Information

    Category: Research Articles

    Received: Sep. 29, 2022

    Accepted: --

    Published Online: Jul. 5, 2023

    The Author Email: Xiao-Juan CHEN (chenxiaojuan@ime.ac.cn), Ke WEI (weike@ime.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2023.03.007

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