Journal of Infrared and Millimeter Waves, Volume. 42, Issue 3, 339(2023)
High power added efficiency AlGaN/GaN MIS-HEMTs for wide band application
Fig. 1. Diagram of the AlGaN/GaN MIS-HEMT (a)SEM of 4×50µm device,(b)the schematic of epitaxial structure,(c)TEM of 0.25-µm T-gate
Fig. 2. f-dependent C-V characteristics of AlGaN/GaN MIS-HEMTs with fm varying from 1 KHz to 200 KHz,inserting Dit-ET mapping in AlGaN/GaN MIS-HEMTs
Fig. 3. Measured dc characteristics of AlGaN/GaN MIS-HEMTs (a) ID versus VDS with VGS varied from -6 V to 2 V, (b) ID and extrinsic transconductance of MIS-HEMTs with VGS varied from -6 V to 2 V at VDS= 6 V, (c) gate leakage with VGS swept to -30 V, (d) off-state breakdown characteristics at VGS=4 V
Fig. 4. Small-signal characteristics of the fabricated AlGaN/GaN MIS-HEMTs at VDS = 10 V/30 V,inserting fT and fmax with different VDS
Fig. 5. Pulsed I-V characteristics of output characteristics measured at VGS = 2 V with different static stress
Fig. 6. Large-signal measurements at 5 GHz in CW mode (a) VDS=10 V, AlGaN/GaN MIS-HEMTs measurement, (b) VDS=30 V, AlGaN/GaN HEMTs measurement, (c) with different VDS AlGaN/GaN MIS-HEMTs large-signal performance diagram
Fig. 8. Large-signal measurements at 5 GHz/10 GHz/30 GHz (a)PAE characteristic,(b)Gain characteristic,(c)Pout characteristic
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Xiao-Juan CHEN, Shen ZHANG, Yi-Chuan ZHANG, Yan-Kui LI, Run-Hua GAO, Xin-Yu LIU, Ke WEI. High power added efficiency AlGaN/GaN MIS-HEMTs for wide band application[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 339
Category: Research Articles
Received: Sep. 29, 2022
Accepted: --
Published Online: Jul. 5, 2023
The Author Email: Xiao-Juan CHEN (chenxiaojuan@ime.ac.cn), Ke WEI (weike@ime.ac.cn)