Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

Zhiwen Li; Jiangliu Luo; Shengqun Hu; Qiang Liu; Wenjie Yu; Youming Lu; Xinke Liu

doi:10.1364/PRJ.385885

Photonics Research, Volume. 8, Issue 6, 799(2020)

Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition

Zhiwen Li^1、†, Jiangliu Luo¹, Shengqun Hu¹, Qiang Liu^2、†, Wenjie Yu², Youming Lu¹, and Xinke Liu^1、*

Author Affiliations

¹College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

²State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

show less

References(54)

[1] Y. Xiao, M. Zhou, J. Liu, J. Xu, L. Fu. Phase engineering of two-dimensional transition metal dichalcogenides. Sci. China Mater., 62, 759-775(2019).

[2] M. Ju, X. Liang, J. Liu, L. Zhou, Z. Liu, R. G. Mendes, M. H. Rümmeli, L. Fu. Universal substrate-trapping strategy to grow strictly monolayer transition metal dichalcogenides crystals. Chem. Mater., 29, 6095-6103(2017).

[3] Q. Zhang, L. Fu. Novel insights and perspectives into weakly coupled ReS₂ toward emerging applications. Chem, 5, 505-525(2019).

[4] Q. Zhang, Y. Xiao, T. Zhang, Z. Weng, M. Zeng, S. Yue, R. G. Mendes, L. Wang, S. Chen, M. H. Rümmeli, L. Peng, L. Fu. Iodine-mediated chemical vapor deposition growth of metastable transition metal dichalcogenides. Chem. Mater., 29, 4641-4644(2017).

[5] Z. Li, J. Wu, C. Wang, H. Zhang, W. Yu, Y. Lu, X. Liu. High-performance monolayer MoS₂ photodetector enabled by oxide stress liner using scalable chemical vapor growth method. Nanophotonics(2020).

[6] A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, K.-W. Ang. Large-scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure. Adv. Opt. Mater., 6, 1800461(2018).

[7] X. Huang, X. Feng, L. Chen, L. Wang, W. C. Tan, L. Huang, K.-W. Ang. Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure. Nano Energy, 62, 667-673(2019).

[8] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS₂ transistors. Nat. Nanotechnol., 6, 147-150(2011).

[9] S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, K. Kim. High-mobility and low-power thin-film transistors based on multilayer MoS₂ crystals. Nat. Commun., 3, 1011(2012).

[10] T. Wang, R. Zhu, J. Zhuo, Z. Zhu, Y. Shao, M. Li. Direct detection of DNA below ppb level based on thionin-functionalized layered MoS₂ electrochemical sensors. Anal. Chem., 86, 12064-12069(2014).

[11] Z. P. Ling, R. Yang, J. W. Chai, S. J. Wang, W. S. Leong, Y. Tong, D. Lei, Q. Zhou, X. Gong, D. Z. Chi, K. W. Ang. Large-scale two-dimensional MoS₂ photodetectors by magnetron sputtering. Opt. Express, 23, 13580-13586(2015).

[12] F. Liu, Y. Wang, X. Liu, J. Wang, H. Guo. A theoretical investigation of orientation-dependent transport in monolayer MoS₂ transistors at the ballistic limit. IEEE Electron Device Lett., 36, 1091-1093(2015).

[13] R. Kappera, D. Voiry, S. E. Yalcin, B. Branch, G. Gupta, A. D. Mohite, M. Chhowalla. Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors. Nat. Mater., 13, 1128-1134(2014).

[14] J.-G. Song, S. J. Kim, W. J. Woo, Y. Kim, I.-K. Oh, G. H. Ryu, Z. Lee, J. H. Lim, J. Park, H. Kim. Effect of Al₂O₃ deposition on performance of top-gated monolayer MoS₂-based field effect transistor. ACS Appl. Mater. Interfaces, 8, 28130-28135(2016).

[15] Q. A. Vu, S. Fan, S. H. Lee, M.-K. Joo, W. J. Yu, Y. H. Lee. Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS₂ field-effect transistors. 2D Mater., 5, 031001(2018).

[16] M. Zeng, Y. Xiao, J. Liu, K. Yang, L. Fu. Exploring two-dimensional materials toward the next-generation circuits: from monomer design to assembly control. Chem. Rev., 118, 6236-6296(2018).

[17] S. Manzeli, D. Ovchinnikov, D. Pasquier, O. V. Yazyev, A. Kis. 2D transition metal dichalcogenides. Nat. Rev. Mater., 2, 17033(2017).

[18] H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, K. I. Bolotin. Bandgap engineering of strained monolayer and bilayer MoS₂. Nano Lett., 13, 3626-3630(2013).

[19] J. Qi, Y.-W. Lan, A. Z. Stieg, J.-H. Chen, Y.-L. Zhong, L.-J. Li, C.-D. Chen, Y. Zhang, K. L. Wang. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics. Nat. Commun., 6, 7430(2015).

[20] I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, R. Bratschitsch. Strain control of exciton-phonon coupling in atomically thin semiconductors. Nano Lett., 18, 1751-1757(2018).

[21] X. Dou, K. Ding, D. Jiang, X. Fan, B. Sun. Probing spin-orbit coupling and interlayer coupling in atomically thin molybdenum disulfide using hydrostatic pressure. ACS Nano, 10, 1619-1624(2016).

[22] S. Deng, A. V. Sumant, V. Berry. Strain engineering in two-dimensional nanomaterials beyond graphene. Nano Today, 22, 14-35(2018).

[23] R. Roldán, A. Castellanos-Gomez, E. Cappelluti, F. Guinea. Strain engineering in semiconducting two-dimensional crystals. J. Phys. Condens. Matter., 27, 313201(2015).

[24] J. Feng, X. Qian, C.-W. Huang, J. Li. Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat. Photonics, 6, 866-872(2012).

[25] S. Pak, J. Lee, Y.-W. Lee, A. R. Jang, S. Ahn, K. Y. Ma, Y. Cho, J. Hong, S. Lee, H. Y. Jeong, H. Im, H. S. Shin, S. M. Morris, S. Cha, J. I. Sohn, J. M. Kim. Strain-mediated interlayer coupling effects on the excitonic behaviors in an epitaxially grown MoS₂/WS₂ van der Waals heterobilayer. Nano Lett., 17, 5634-5640(2017).

[26] S. Manzeli, A. Allain, A. Ghadimi, A. Kis. Piezoresistivity and strain-induced band gap tuning in atomically thin MoS₂. Nano Lett., 15, 5330-5335(2015).

[27] A. P. Nayak, S. Bhattacharyya, J. Zhu, J. Liu, X. Wu, T. Pandey, C. Jin, A. K. Singh, D. Akinwande, J.-F. Lin. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. Nat. Commun., 5, 3731(2014).

[28] G. H. Ahn, M. Amani, H. Rasool, D.-H. Lien, J. P. Mastandrea, J. W. Ager, M. Dubey, D. C. Chrzan, A. M. Minor, A. Javey. Strain-engineered growth of two-dimensional materials. Nat. Commun., 8, 608(2017).

[29] S.-W. Wang, H. Medina, K.-B. Hong, C.-C. Wu, Y. Qu, A. Manikandan, T.-Y. Su, P.-T. Lee, Z.-Q. Huang, Z. Wang, F.-C. Chuang, H.-C. Kuo, Y.-L. Chueh. Thermally strained band gap engineering of transition-metal dichalcogenide bilayers with enhanced light-matter interaction toward excellent photodetectors. ACS Nano, 11, 8768-8776(2017).

[30] D. Kufer, G. Konstantatos. Highly sensitive, encapsulated MoS₂ photodetector with gate controllable gain and speed. Nano Lett., 15, 7307-7313(2015).

[31] S. Das, H.-Y. Chen, A. V. Penumatcha, J. Appenzeller. High performance multilayer MoS₂ transistors with scandium contacts. Nano Lett., 13, 100-105(2013).

[32] S. Yu, S. Ran, H. Zhu, K. Eshun, C. Shi, K. Jiang, K. Gu, F. J. Seo, Q. Li. Study of interfacial strain at the α-Al₂O₃/monolayer MoS₂ interface by first principle calculations. Appl. Surf. Sci., 428, 593-597(2018).

[33] M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, M. C. Payne. First-principles simulation: ideas, illustrations and the CASTEP code. J. Phys. Condens. Matter, 14, 2717-2744(2002).

[34] M. A. Baker, R. Gilmore, C. Lenardi, W. Gissler. XPS investigation of preferential sputtering of S from MoS₂ and determination of MoS_x stoichiometry from Mo and S peak positions. Appl. Surf. Sci., 150, 255-262(1999).

[35] J. Kong, K. T. Park, A. C. Miller, K. Klier. Molybdenum disulfide single crystal (0002) plane XPS spectra. Surf. Sci. Spectra, 7, 69-74(2000).

[36] D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, T. G. Ivanov. Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride. ACS Nano, 10, 3580-3588(2016).

[37] Raman and Absorbance of multilayer MoS₂. Dataset 1.

[38] I. Calizo, A. A. Balandin, W. Bao, F. Miao, C. N. Lau. Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Lett., 7, 2645-2649(2007).

[39] L. Su, Y. Zhang, Y. Yu, L. Cao. Dependence of coupling of quasi 2-D MoS₂ with substrates on substrate types, probed by temperature dependent Raman scattering. Nanoscale, 6, 4920-4927(2014).

[40] S. Lei, L. Ge, S. Najmaei, A. George, R. Kappera, J. Lou, M. Chhowalla, H. Yamaguchi, G. Gupta, R. Vajtai, A. D. Mohite, P. M. Ajayan. Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe. ACS Nano, 8, 1263-1272(2014).

[41] D. J. Late. Temperature dependent phonon shifts in few-layer black phosphorus. ACS Appl. Mater. Interfaces, 7, 5857-5862(2015).

[42] A. S. Pawbake, M. S. Pawar, S. R. Jadkar, D. J. Late. Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies. Nanoscale, 8, 3008-3018(2016).

[43] S. X. Yang, C. Wang, C. Ataca, Y. Li, H. Chen, H. Cai, A. Suslu, J. C. Grossman, C. B. Jiang, Q. Liu, S. Tongay. Self-driven photodetector and ambipolar transistor in atomically thin GaTe-MoS₂ p–n vdW heterostructure. ACS Appl. Mater. Interfaces, 8, 2533-2539(2016).

[44] X. Feng, V. V. Kulish, P. Wu, X. Liu, K.-W. Ang. Anomalously enhanced thermal stability of phosphorene via metal adatom doping: an experimental and first-principles study. Nano Res., 9, 2687-2695(2016).

[45] Z. Ding, Q.-X. Pei, J.-W. Jiang, Y.-W. Zhang. Manipulating the thermal conductivity of monolayer MoS₂ via lattice defect and strain engineering. J. Phys. Chem. C, 119, 16358-16365(2015).

[46] S. Bertolazzi, J. Brivio, A. Kis. Stretching and breaking of ultrathin MoS₂. ACS Nano, 5, 9703-9709(2011).

[47] A. R. Klots, A. K. M. Newaz, B. Wang, D. Prasai, H. Krzyzanowska, J. Lin, D. Caudel, N. J. Ghimire, J. Yan, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. H. Tolk, S. T. Pantelides, K. I. Bolotin. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. Sci. Rep., 4, 6608(2014).

[48] H. S. Lee, M. S. Kim, H. Kim, Y. H. Lee. Identifying multiexcitons in MoS₂ monolayers at room temperature. Phys. Rev. B, 93, 140409(2016).

[49] C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, D. Wang. ZnO nanowire UV photodetectors with high internal gain. Nano Lett., 7, 1003-1009(2007).

[50] F. González-Posada, R. Songmuang, M. Den Hertog, E. Monroy. Room-temperature photodetection dynamics of single GaN nanowires. Nano Lett., 12, 172-176(2012).

[51] W. Zhang, J.-K. Huang, C.-H. Chen, Y.-H. Chang, Y.-J. Cheng, L.-J. Li. High-gain phototransistors based on a CVD MoS₂ monolayer. Adv. Mater., 25, 3456-3461(2013).

[52] A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, A. K. M. Newaz. Large array fabrication of high performance monolayer MoS₂ photodetectors. Appl. Phys. Lett., 111, 043110(2017).

[53] A. Zhang, S. You, C. Soci, Y. Liu, D. Wang, Y.-H. Lo. Silicon nanowire detectors showing phototransistive gain. Appl. Phys. Lett., 93, 121110(2008).

[54] L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, K.-W. Ang. Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power. ACS Appl. Mater. Interfaces, 9, 36130-36136(2017).

CLP Journals

[1] Luke Horstman, Ning Hsu, James Hendrie, David Smith, Jean-Claude Diels, "Exceptional points and the ring laser gyroscope," Photonics Res. 8, 252 (2020)

Tools

Get Citation

Copy Citation Text

Zhiwen Li, Jiangliu Luo, Shengqun Hu, Qiang Liu, Wenjie Yu, Youming Lu, Xinke Liu, "Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition," Photonics Res. 8, 799 (2020)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Optoelectronics

Received: Dec. 19, 2019

Accepted: Feb. 29, 2020

Published Online: Apr. 30, 2020

The Author Email: Xinke Liu (xkliu@szu.edu.cn)

DOI:10.1364/PRJ.385885

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology