[1] [1] B. H. Park, B. S. Kang, S. D. Bu et al.. Lanthanum-substituted bismuth titanate for use in non-volatile memories [J]. Nature, 1999, 401: 682～684

[2] [2] T. Watanae, H. Funakubo. Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition [J]. Appl. Phys. Lett., 2002, 80: 100～102

[3] [3] Z. G. Hu, Y. W. Li, F. Y. Yue et al.. Temperature dependence of optical band gap in ferroelectric Bi3.25La0.75Ti3O12 films determined by ultraviolet transmittance measurements [J]. Appl. Phys. Lett., 2007, 91：221903～221905

[4] [4] H. Adachi, T. Kawaguchi. Electro-optic effects of (Pb, La) (Zr,T i)O3 thin films prepared by rf planar magnetron sputtering [J]. Appl. Phys. Lett., 1983, 42: 867～ 868

[5] [5] T. M. Graettinger, S. H. Rou, M. S. Ameen et al.. Electro-optic characterization of ion beam sputter-deposited KNbO3 thin films [J]. Appl. Phys. Lett., 1991, 58: 1964～1966

[6] [6] Mo Dang. Solid State Optics[M]. Beijing : Higher Education Press

[7] [7] Sun Zhaoqi, Cao Chunbin, Song Xueping et al.. Study on ellipsometric spectra of ITO film[J] . Acta Optica Sinica, 2008, 28 (2) : 403～408

[8] [8] D.Y. Kim.J. J. Choi, H. E. Kim. Electro-optic characteristics of (001)-oriented Ba0.6Sr0.4TiO3 thin films[J]. Appl. Phys. Lett., 2003, 82: 1455～1457