Chinese Journal of Lasers, Volume. 46, Issue 8, 0811002(2019)

Effect of CdSe Quantum Dot Sensitization on GaAs Luminescence Characteristics

Zhan Liu, Fengyuan Lin*, Mei Gao, Xuan Fang, Dan Fang, Dengkui Wang, Jilong Tang, Xiaohua Wang, and Zhipeng Wei
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology,Changchun, Jilin 130022, China
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    Figures & Tables(9)
    Flow flow of CdSe quantum dot sensitization
    Schematic of CdSe QDs/GaAs band structure
    XRD spectrum of CdSe QDs/GaAs sample
    SEM image of CdSe QDs/GaAs sample
    PL spectra of CdSe QDs/GaAs sample and GaAs substrate at temperature of 10 K
    Test results of CdSe QDs/GaAs. (a) Results of PL variable-temperature test; (b) peak position as a function of temperature
    Experimental result and fitting curve of E4 peak position varying with temperature
    PL spectraof CdSe QDs/GaAs sample under variable powers at temperature of 10 K
    Measured results and fitting curves of different luminescence peak positions. (a) Integrated intensities and fitting curves of D1, D2, and D3 variable-power luminescence peak positions; (b) measured results and fitting curve of D4 peak position varying with power density
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    Zhan Liu, Fengyuan Lin, Mei Gao, Xuan Fang, Dan Fang, Dengkui Wang, Jilong Tang, Xiaohua Wang, Zhipeng Wei. Effect of CdSe Quantum Dot Sensitization on GaAs Luminescence Characteristics[J]. Chinese Journal of Lasers, 2019, 46(8): 0811002

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    Paper Information

    Category: spectroscopy

    Received: Feb. 1, 2019

    Accepted: Apr. 12, 2019

    Published Online: Aug. 13, 2019

    The Author Email: Lin Fengyuan (linfengyuan_0116@163.com)

    DOI:10.3788/CJL201946.0811002

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