Chinese Journal of Lasers, Volume. 46, Issue 8, 0811002(2019)
Effect of CdSe Quantum Dot Sensitization on GaAs Luminescence Characteristics
Fig. 5. PL spectra of CdSe QDs/GaAs sample and GaAs substrate at temperature of 10 K
Fig. 6. Test results of CdSe QDs/GaAs. (a) Results of PL variable-temperature test; (b) peak position as a function of temperature
Fig. 7. Experimental result and fitting curve of E4 peak position varying with temperature
Fig. 8. PL spectraof CdSe QDs/GaAs sample under variable powers at temperature of 10 K
Fig. 9. Measured results and fitting curves of different luminescence peak positions. (a) Integrated intensities and fitting curves of D1, D2, and D3 variable-power luminescence peak positions; (b) measured results and fitting curve of D4 peak position varying with power density
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Zhan Liu, Fengyuan Lin, Mei Gao, Xuan Fang, Dan Fang, Dengkui Wang, Jilong Tang, Xiaohua Wang, Zhipeng Wei. Effect of CdSe Quantum Dot Sensitization on GaAs Luminescence Characteristics[J]. Chinese Journal of Lasers, 2019, 46(8): 0811002
Category: spectroscopy
Received: Feb. 1, 2019
Accepted: Apr. 12, 2019
Published Online: Aug. 13, 2019
The Author Email: Lin Fengyuan (linfengyuan_0116@163.com)