Journal of Synthetic Crystals, Volume. 54, Issue 6, 986(2025)

Effect of Substrate Type on Stress and Crystallinity of Growing Polycrystalline Diamond Film

Xiang LI*, Gen CHEN, Jie SHEN, and Minghui ZHU
Author Affiliations
  • Department of Material Science and Information Technology, University of Anhui, Hefei230039, China
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    Figures & Tables(16)
    Mo support structure and the heat sink structure are described as follows
    Schematic diagram of the relative position of sample, molybdenum substrate support, heat sink and abutment
    Electron density distribution at a height of 16 mm (a) and simulation results showing the variation in electron density from the center to the edge of the substrate surface (b) are presented
    Light emission spectra associated with abutment heights of 12, 14 and 16 mm (a), as well as the morphology of the plasma sphere at 16 mm (b)
    For the diamond film deposited on a ϕ50.8 mm W substrate, Raman spectra were acquired at six points spaced 5 mm apart along a radial line from center to edge (a), and SEM images were captured at selected locations (b)~(g)
    For the diamond film deposited on a ϕ50.8 mm Si substrate, Raman spectra were acquired at six points spaced 5 mm apart along a radial line from center to edge (a), and SEM images were captured at selected locations (b)~(g)
    For the diamond film deposited on a ϕ50.8 mm Mo substrate, Raman spectra were acquired at six points spaced 5 mm apart along a radial line from center to edge (a), and SEM images were captured at selected locations (b)~(g)
    Variation diagram of the 1 331 cm-1 peak height of diamond deposited on W, Si and Mo substrates
    FWHM comparison chart of diamond corresponding to six detection points from the center to the edge deposited on W, Si, and Mo substrates
    Relationship diagram of diamond crystal face spacing and diffraction angle sin2ψ deposited on W, Si and Mo substrates
    XRD patterns of deposited diamond
    W substrate coated with polycrystalline diamond after 200 h of deposition
    Raman spectra obtained from the center to the edge of a polycrystalline diamond film deposited on a W substrate over a period of 200 h
    TEM cross-sectional image (a), Fourier transform (FFT) diffraction pattern (b), and inverse FFT image (c) obtained from a selected region of the diamond film deposited on a W substrate
    • Table 1. Nucleation and growth parameters of deposited diamond films

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      Table 1. Nucleation and growth parameters of deposited diamond films

      ParameterPower/WPressure/kPaGas flow: H2/CH4Time/hSubstrate temperature/℃
      Nucleation4 10020.5400 sccm/15 sccm1910±20
      Growth4 10021400 sccm/12 sccm50910±20
    • Table 2. Physical properties of substrates, carbides and diamonds

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      Table 2. Physical properties of substrates, carbides and diamonds

      MaterialLattice constant/ÅElasticity modulus/GPaThermal expansion coefficient/(10-6 K-1Melting temperature/K
      Si335.4311302.51 683
      W3.1654114.53 600
      Mo3.1473275.82 888
      Diamond3.5671 0501.23 773
      MoC4.143924.92 965
      WC2.817103.83 143
      SiC3.14504.43 027
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    Xiang LI, Gen CHEN, Jie SHEN, Minghui ZHU. Effect of Substrate Type on Stress and Crystallinity of Growing Polycrystalline Diamond Film[J]. Journal of Synthetic Crystals, 2025, 54(6): 986

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    Paper Information

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    Received: Jan. 23, 2025

    Accepted: --

    Published Online: Jul. 11, 2025

    The Author Email: Xiang LI (lx0415521@163.com)

    DOI:10.16553/j.cnki.issn1000-985x.2025.0019

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