Laser & Optoelectronics Progress, Volume. 61, Issue 19, 1913004(2024)

Advances in the Heterogeneous Integration of Silicon and III-V Semiconductor Lasers (Invited)

Xu Gao* and Lin Chang
Author Affiliations
  • State Key Laboratory of Advanced Optical Communications System and Networks, School of Electronics, Peking University, Beijing 100871, China
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    Figures & Tables(10)
    (a) Definition of inverted chip assembly; (b) inverted chip assembly on various substrates[32]
    Schematic process flow for (a) direct (O2 plasma-assisted/SiO2 covalent) wafer bonding and (b) intermediate layer wafer bonding (DVS-BCB)[41]
    Illustration of area magnification in transfer printing III-V coupons from the III-V source substrate to the SOI target substrate. (a) Patterned stamp; (b) two source substrates with patterned coupons, (c) SOI target substrate[51]
    Process flow of micro-transfer printing. (a) InP starting layer stack; (b) coupon patterning; (c) tether definition and release etch; (d) top view; (e) pick-up of the coupon from the source substrate; (f) printing of the III-V coupon to the SOI target substrate[51]
    Overview of heterogeneous epitaxial integration of mismatched materials for photonic devices[67]
    (a) 3D schematic of the ICL heterogeneously integrated with a silicon waveguide; (b) cross-sectional schematic of the hybrid III-V/Si active region; (c) active region cross section of device A, overlaid with contour plots of the electric field profiles |Ex| for the first two optical modes[95]
    (a) Top-view schematic of the QCL array and AWG; (b) micrograph of a multi-spectral DFB laser[103]
    • Table 1. Possible applications of on-chip optical sources in different wavelength ranges

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      Table 1. Possible applications of on-chip optical sources in different wavelength ranges

      Wavelength rangeTypical application
      Near-IR(750 nm‒2 μm)Telecommunication68, LiDAR69, information processing70, optical atomic clocks71, precision measurement72, biological imaging73, and spectroscopy74
      Mid-IR(2 μm‒12 μm)Spectroscopy of gases and biomolecules75
    • Table 2. Summary of Si/III-V lasers integrated through flip chip, bonding, and transfer printing

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      Table 2. Summary of Si/III-V lasers integrated through flip chip, bonding, and transfer printing

      Working wavelength /nmIntegration approachMaximum output powerThreshold current densityCavity structureReference/year
      1310flip-chip integration0.66 mW1.0 mAVCSEL76]/2020
      1310flip-chip integration12 mW125 mA77]/2021
      1546bonding0.5 mW75 mAFP78]/2020
      1310bonding7 mW6.7 mADFB79]/2021
      1310bonding2.8 mW4 mADFB80]/2021
      1090bonding21.7 mW17.4 mAMicrodisk81]/2021
      1300bonding20 mW233 A/cm2FP82]/2023
      1610transfer printing-2.5 dBmFP83]/2021
      850transfer printing>100 µWSub-mAVCSEL84]/2021
    • Table 3. Summary of heterogeneous integrated laser in the mid infrared ranges

      View table

      Table 3. Summary of heterogeneous integrated laser in the mid infrared ranges

      Working wavelength /μmTypes of lasersIntegrationapproachMaximum output power /mWThreshold current densityCavity structureReference/year
      2W-shaped InGaAs/GaAsSb Type II active regionbonding4.259 mAFP94]/2015
      3.65ICLbonding6.61.1 kA/cm²FP95]/2018
      4.8QCLbonding311.7 kA/cm2FP96]/2016
      4.8QCLbonding110.58 kA/cm2DFB97]/2016
      4.7QCLtransfer printing25.6 kA/cm2FP98]/2017
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    Xu Gao, Lin Chang. Advances in the Heterogeneous Integration of Silicon and III-V Semiconductor Lasers (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(19): 1913004

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    Paper Information

    Category: Integrated Optics

    Received: Aug. 8, 2024

    Accepted: Sep. 5, 2024

    Published Online: Nov. 5, 2024

    The Author Email:

    DOI:10.3788/LOP241823

    CSTR:32186.14.LOP241823

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