Laser & Optoelectronics Progress, Volume. 61, Issue 19, 1913004(2024)
Advances in the Heterogeneous Integration of Silicon and III-V Semiconductor Lasers (Invited)
Fig. 1. (a) Definition of inverted chip assembly; (b) inverted chip assembly on various substrates[32]
Fig. 2. Schematic process flow for (a) direct (O2 plasma-assisted/SiO2 covalent) wafer bonding and (b) intermediate layer wafer bonding (DVS-BCB)[41]
Fig. 3. Illustration of area magnification in transfer printing III-V coupons from the III-V source substrate to the SOI target substrate. (a) Patterned stamp; (b) two source substrates with patterned coupons, (c) SOI target substrate[51]
Fig. 4. Process flow of micro-transfer printing. (a) InP starting layer stack; (b) coupon patterning; (c) tether definition and release etch; (d) top view; (e) pick-up of the coupon from the source substrate; (f) printing of the III-V coupon to the SOI target substrate[51]
Fig. 5. Overview of heterogeneous epitaxial integration of mismatched materials for photonic devices[67]
Fig. 6. (a) 3D schematic of the ICL heterogeneously integrated with a silicon waveguide; (b) cross-sectional schematic of the hybrid III-V/Si active region; (c) active region cross section of device A, overlaid with contour plots of the electric field profiles |Ex| for the first two optical modes[95]
Fig. 7. (a) Top-view schematic of the QCL array and AWG; (b) micrograph of a multi-spectral DFB laser[103]
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Xu Gao, Lin Chang. Advances in the Heterogeneous Integration of Silicon and III-V Semiconductor Lasers (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(19): 1913004
Category: Integrated Optics
Received: Aug. 8, 2024
Accepted: Sep. 5, 2024
Published Online: Nov. 5, 2024
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CSTR:32186.14.LOP241823