Chinese Optics Letters, Volume. 20, Issue 6, 061601(2022)
Temperature dependence of LiNbO3 dislocation density in the near-surface layer
Figures & Tables(6)
Fig. 1. Etching pits of LiNbO3 (a) after thermal annealing at 500°C and (b) in pristine state.
Fig. 2. Dependence of the dislocation density N determined by wet selective etching on the annealing temperature T.
Fig. 3. AFM image of etch pits and the profile of etching pits (line 146).
Fig. 4. Dependence of ρ110/ρ220 for a single crystal of X-cut LN on the density of chaotically distributed dislocations N, X-ray Co-λβ-radiation.
Fig. 5. Dependence of the dislocation density N (determined by the results of XRD) on the thermal annealing temperature T.
Table 1. The Experimental Ratio of the Integral Reflection Coefficients
View tableView in ArticleTable 1. The Experimental Ratio of the Integral Reflection Coefficients
Thermal Annealing Sample Pristine 3.17 400°C – 4 h 3.26 500°C – 4 h 3.57 600°C – 4 h 3.55
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Oksana Semenova, Aleksei Sosunov, Nikolai Prokhorov, Roman Ponomarev, "Temperature dependence of LiNbO3 dislocation density in the near-surface layer," Chin. Opt. Lett. 20, 061601 (2022)
Paper Information
Category: Optical Materials
Received: Jan. 24, 2022
Accepted: Apr. 2, 2022
Published Online: May. 6, 2022
The Author Email: Oksana Semenova (orsemenova@psu.ru)
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