Monolithic and single-functional-unit level integration of electronic and photonic elements: FET-LET hybrid 6T SRAM

Fig. 4. Read and write delay and energy for various SRAM arrays with FET, LET, and ballistic LET access devices. (a) Read delay, (b) read energy, (c) write delay, (d) write energy. The curves with LETs and ballistic LETs are indistinguishable.

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Fig. 5. Prototype hybrid 6T array.

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Table 1. Comparison of the Performance of 4 kB and 16 kB SRAM Arrays with FET, LET, and Ballistic LET Access Devices

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Table 1. Comparison of the Performance of 4 kB and 16 kB SRAM Arrays with FET, LET, and Ballistic LET Access Devices

4 kB SRAM Array				16 kB SRAM Array
	FET Access Devices	LET Access Devices	Ballistic LET Access Devices	FET Access Devices	LET Access Devices	Ballistic LET Access Devices
Read delay (ps)	846	187	187	1690	374	374
Write delay (ps)	790	303	303	1580	598	598
Read energy (fJ)	20.1	0.9	0.89	40.2	1.8	1.77
Write energy (fJ)	30	7.07	7.06	59.8	14.1	14.1
Estimated area ( ${μm}^{2}$ )	$3.67 \times 10^{3}$	$5.0 \times 10^{3}$	$2.35 \times 10^{3}$	$1.47 \times 10^{4}$	$2.0 \times 10^{4}$	$9.40 \times 10^{3}$

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Antardipan Pal, Yong Zhang, Dennis D. Yau, "Monolithic and single-functional-unit level integration of electronic and photonic elements: FET-LET hybrid 6T SRAM," Photonics Res. 9, 1369 (2021)

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Paper Information

Category: Integrated Optics

Received: Jan. 27, 2021

Accepted: May. 4, 2021

Published Online: Jul. 14, 2021

The Author Email: Yong Zhang (yong.zhang@uncc.edu)

DOI:10.1364/PRJ.420887

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology