Fig. 1. Sketches of (a) the silicon waveguide structure (Hwg=220  nm, Wwg=500  nm, and swg=100  nm) including the p-i-n lateral diode (wi=1.2  μm) and metal contacts and (b) the polarization-diversity loop setup based on the silicon waveguide highlighting CW (red arrows) and CCW (dark yellow arrows) propagation for signal (solid) and idler (dashed).

Fig. 2. Experimental setup for conversion bandwidth measurements using the polarization-insensitive wavelength converter.

Fig. 3. (a) Conversion bandwidth as a function of the signal wavelength at constant power per waveguide input (22 dBm at grating coupler) and (b) diode current as a function of the reverse bias applied to the diode for constant combined power at both grating couplers.

Fig. 4. Experimental setup for the system characterization of the wavelength converter.

Fig. 5. (a) BER and received OSNR of channel 4 as a function of the signal power in input to the circulator and (b) input and output spectra for the WDM PDM wavelength conversion (resolution bandwidth of 0.1 nm).

Fig. 6. (a) BER as a function of the received OSNR/channel for signal and idler channels and (b) required receiver OSNR/channel and OSNR penalty for a BER=3.8×10−3 (HD-FEC).

Fig. 7. Polarization dependence shown as average effective SNR difference between x and y polarizations for the signal and idler channels.