Acta Optica Sinica, Volume. 38, Issue 9, 0923001(2018)
Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array
Fig. 1. (a) Schematic of vertical-chip structure; (b) schematic of flip-chip structure; (c) surface of vertical-chip;(d) surface of flip-chip; (e) optical power curves for vertical-chip and flip-chip
Fig. 5. Theoretical calculation and test results of output power. (a) m=1, ambient temperature of 30 ℃;(b) m=1, ambient temperature of 60 ℃; (c) m=6, ambient temperature of 30 ℃;(d) m=6, ambient temperature of 60 ℃
Fig. 7. Temperature distributions of basement structure. (a) PDMS rectangular basement structure;(b) Cu rectangular basement structure; (c) PDMS perforated rectangular basement structure;(d) Cu perforated rectangular basement structure; (e) PDMS column array basement structure;(f) Cu column array basement structure
Fig. 8. (a) Relationship between thermal resistance of PDMS and air convection coefficient for different structures;(b) relationship between thermal resistance of Cu and air convection coefficient for different structures
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Zhang Ban, Jingqiu Liang, Jinguang Lü, Yang Li. Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array[J]. Acta Optica Sinica, 2018, 38(9): 0923001
Category: Optical Devices
Received: Mar. 15, 2018
Accepted: Apr. 16, 2018
Published Online: May. 9, 2019
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