[1] [1] Kunhardt E E. IEEE Trans. on Plasma Sci., 2000, 28(1): 189.

[2] [2] Li X, Liu R, Li X, et al. Phys. Plasmas, 2019, 26: 023510.

[3] [3] Xu Y, Dong X, Li X, et al. Plasma Sci. Technol., 2019, 21: 065501.

[4] [4] Dimitrakellis P, Gogolides E. Microelectronic Engineering, 2018, 194: 109.

[5] [5] Khlyustova A V, Sirotkin N A, Krayev A S et al. Plasma Sci. Technol., 2019, 21: 025505.

[6] [6] Kieft I E, E P v d Laan and Stoffels E. New Journal of Physics, 2004, 6: 149.

[7] [7] Tian Y, Ma R, Zhang Q, et al. Plasma Process Polym., 2015, 12(5): 439.

[8] [8] Zhan J, Zhang A, Paul Héroux, et al. Science of the Total Environment, 2019, 661: 266.

[9] [9] Vidmar R J. IEEE Trans. on Plasma Sci., 1990, 18: 733.

[10] [10] Kanazawa S, Kogoma M, Moriwaki T and Okazaki S. J. Phys. D: Appl. Phys., 1988, 21: 838.

[11] [11] Massines F, Gouda G. J. Phys. D: Appl. Phys., 1998, 31: 3411.

[12] [12] Staack D, Farouk B, Gutsol A, et al. Plasma Sources Sci. Technol., 2008, 17: 025013.

[13] [13] Li X, Li X, Gao K, et al. Phys. Plasmas, 2019, 26: 033507.

[14] [14] Li X, Wang B, Jia P, et al. Plasma Sci. Technol., 2017, 19: 115505.

[16] [16] Cullen P J, Milosavljevic′ V. Prog. Theor. Exp. Phys., 2015, 063J01.

[17] [17] Nimisha Srivastava, Wang C. J. Appl. Phys., 2011, 110: 053304.

[18] [18] Li S, Huang W, Zhang J, et al. Appl. Phys. Lett., 2009, 94: 111501.