[1] [1] Feinleib J, de Neufville J, Moss S C et al.. Rapid reversible light-induced crystallization of amorphous semiconductors. Appl. Phys. Lett., 1971, 18(6):254～257

[2] [2] Xie Q, Hou L, Ruan H et al.. Effects of preparation parameters on the optical constants of Ge2Sb2Te5 thin films. Proc. SPIE, 2000, 4085:112～116

[4] [4] Miao X S, Chong T C, Huang Y M et al.. Dependence of optical constants on film thickness of phase change media. Jpn. J. Appl. Phys., 1999, 38(3B):1638～1641

[5] [5] Kim J H, Kim M R. Effects of microstructure on optical properties of Ge2Sb2Te5 thin films. Jpn. J. Appl. Phys., 1998, 37(4B):2116～2117

[6] [6] Lee C M, Chin T S, Huang Y Y et al.. Optical properties of Ge40Sb10Te50Bx (x=0～2) films. Jpn. J. Appl. Phys., 1999, 38(11):6369～6371

[7] [7] Kim S Y, Kim S J, Seo H et al.. Complex refractive indices of GeSbTe-alloy thin films: Effect of nitrogen doping and wavelength dependence. Jpn. J. Appl. Phys., 1999, 38(3B):1713～1714

[8] [8] Kim S Y, Kim S J, Seo H et al.. Variation of the complex refractive indices with Sb-addition in Ge-Sb-Te alloy and their wavelength dependence. Proc. SPIE, 1998, 3401:112～115

[9] [9] Li J, Hou L, Ruan H et al.. Effects of film thickness on the optical properties of AgInSbTe phase-change film. Proc. SPIE, 2000, 4085:129～132