Journal of Synthetic Crystals, Volume. 54, Issue 3, 414(2025)

Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method

YANG Wenjuan1,2, BU Yuzhe1,2, SAI Qinglin1、*, and QI Hongji1,3
Author Affiliations
  • 1Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China
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    YANG Wenjuan, BU Yuzhe, SAI Qinglin, QI Hongji. Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method[J]. Journal of Synthetic Crystals, 2025, 54(3): 414

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    Paper Information

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    Received: Nov. 30, 2024

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email: SAI Qinglin (saiql@siom.ac.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0304

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