Journal of Synthetic Crystals, Volume. 54, Issue 3, 414(2025)
Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method
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YANG Wenjuan, BU Yuzhe, SAI Qinglin, QI Hongji. Dislocation Defects and Their Distribution Characteristics in Ga2O3 Crystal Grown by Edge-Defined Film-Fed Growth Method[J]. Journal of Synthetic Crystals, 2025, 54(3): 414
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Received: Nov. 30, 2024
Accepted: Apr. 23, 2025
Published Online: Apr. 23, 2025
The Author Email: SAI Qinglin (saiql@siom.ac.cn)